MIM隧道发光二极管的电子输运研究
THE RESEARCH OF ELECTRON TRANSFER IN MIM LIGHT EMISSION TUNNEL DIODE
-
摘要: 本文报道了MIM隧道二极管的发光和负阻现象,用梯形势垒计算了电流-电压特性。结果显示,由于SPP波对电子的阻挡和束缚作用引起的势垒平均宽度的增加所导致的负阻现象与实验结果相符合。
-
关键词:
- MIM隧道二极管; 发光; 电子输运
Abstract: This paper reports the light emission from MIM tunnel diode and Negative Differential Resistance (NDR) in its I-V characteristic curve. By building the trapezoid potential barrier model and calculating the numerical solution of I-V characteristic curve with computer, it is found that the increment of potential barrier average width is agree with the experiment well. This increment of potential barrier average width is caused by the SPP s impeding and trapping effect upon tunneling electrons. -
Lambe J,McCarthy S L.Light emission from inclastic electron tunneling Phys.Rev Lett.,1976:37(14):923-926.[2]Troyan P E, Lubsanov R B, Vorobyev G A,et al Flat dusplay based on the metal-insulator-metal emitter array.J.Vac.Sci.Technol.B.1993, 11(2):514-517[3]Raymond S,Van Hoof C,Geone J,et al Resonant tunneling light-emitting diode as an optical switch Electron. Lett.,1993,29(14):1301-1302.[4]Akazawa M,Ameimiya Y.Directional single-electron-tunneling junction Jpn[J].J Appl Phys.1996,35(Part l,No.6 A):3569-3575[5]Ito K, Ohygrma S, Uehara Y, et al STM light emission spectroscopy of surface micro-structures on granular Au films. Surface Science,1995, 324(2/3):282-288.[6]Hoofring A B,Kapoor V J,Krawczonek W.Submicron nickel-oxide-gold tunnel diode detectors for rectennas. J.Appl.Phys.,1989,66(1): 430-437.[7]Mills D L, Weber M,Laks B.Light Emission from Tunnel Junctions.In Tunneling Spectroscopy.edited by Hansma P K,New York:Plcnum,1982,121-15l[8]Szentirmay Z.Surface plasmon assisted clection-photon interaction in metal-oxide-metal layered structures Prog.Quant.Electr,1991.15(3):175-230[9]张佑文,孙承休,高中林,孙日俊.金属/绝缘体/金属隧道结的粗糙度与发光光谱的关系.电子学报。1997, 25(5):25-28。[10]Schiff L I Quantum Mechanics,3rd cd.,New York:McGraw-Hill Book Company;1968:chap.8.[11]Kittle C Introduction to Solid State Physics,6th edition,New York:John Wiley Sons:Inc.,1986:134.[12]Sze S M.Physics of semiconductor Devices, 2nd edition,New York:John Wiley Sons;1981,396[13]马文淦,林趾荣,张桂根,等.金属势垒参数与上电极的相关性,物理学报,1991:40(3):483-488.
计量
- 文章访问数: 2086
- HTML全文浏览量: 111
- PDF下载量: 451
- 被引次数: 0