用因子分析法建立徽波场效应管S参数的统计模型
A STATISTICAL MODEL OF MICROWAVE FET S-PARAMETER USING FACTOR ANALYSIS
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摘要: 本文提出用因子分析法建立微波场效应管S参数的统计模型,给出了建模的算法步骤和模拟结果,并与主成分分析法建立的统计模型进行了比较。从结果可以看出,用因子分析法建立的统计模型具有比较高的精度。Abstract: Factor analysis method is firstly used to establish 5 parameter statistical model of microwave FETs. This statistical model is compared with the one established by principal component analysis method. The results show that the statistical model by factor analysis is more accurate than that by principal component analysis
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Meehan M D, Purviance J. Yield and Reliability in Microwave Circuit and System Design, Boston: Artech House, 1993, chapter 6, pp. 179-207.[2]Purvisnce J, et al. A linear statistical FET model using principal component analysis. IEEE Trans. on MTT, 1989, MTT-37(9): 1389-1394.[3]Joreskog K G. Factor analysis勿least squares and maximum likelihood, in Statistical Methods for[4]Digital Computers, K. Enstein, A. Ralston, and H. S. Wilf (eds.), New York: John Wiley, 1975. Chapter 2.[5]Bandler J W, et al. Integrated physics-oriented statistical modeling, simulation and optimization. IEEE Trans. on MTT, 1992; 40(6): 1374-1399. -
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