低温多晶硅发射极晶体管电流增益模型和模拟
MODEL AND MODELING OF LOW TEMPERATURE CURRENT GAIN OF POLYSILICON EMITTER BIPOLAR TRANSISTOR
-
摘要: 本文考虑禁带变窄效应、载流子冻析效应和多晶硅/单晶硅界面复合与氧化层隧穿效应,采用有效复合速度方法,建立了多晶硅发射极晶体管电流增益的温度关系模型。模拟计算结果与实验符合较好。Abstract: A unified model of low temperature current gain of polysilicon emitter bipolar transistors based on effective recombination speed method is presented, incorporating bandgap narrowing, carrier freezing-out and tunneling of holes through interface oxide. The modeling results based on the unified model are in good agreement with experimental data.
-
Yu Z, et al. IEEE Trans. on ED, 1984, ED-31(6): 773-784.[2]Suzuki K. IEEE Trans. on ED, 1991, ED-33(11): 2512-2518.[3]Blaudau W,et al. J. Appl. Phys., 1974, 45(4): 1846-1848.[4]Slotboom J W, et al. Solid-State Electron., 1976, 19(10):857-862.[5]Caughey D M, et al. Proc. IEEE, 1967, 52(12): 2192-2193.[6]王阳元,等. 多晶硅薄漠及其在集成电路中的应用.北京:科学出版社,1983,136-139.[7]Klaassen D B M. Solid-State Electron., 1992, 35(7): 953-967.[8]郑茳,等.电子科学学刊,1992,14(3): 325-328.[9]De Graaff H C, et al. IEEE Trans. on ED, 1979, ED-26(11): 1771-1776.
计量
- 文章访问数: 2267
- HTML全文浏览量: 120
- PDF下载量: 601
- 被引次数: 0