Chip Collaborative Protection Design Method Based on Piecewise Linear Model for Transmission Line Pulse Transient Interference Signal
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摘要: 随着电子设备向小型化、高密度和高速的趋势发展，集成电路作为电子设备的基本核心单元也朝着这一方向发展，由此带来了越来越严重的电磁兼容问题。其中静电放电问题越来越引起设计者、制作者和使用者的重视。该文利用传输线脉冲(TLP)方法对芯片进行测试，获取了器件在应对静电放电干扰时的伏安特性数据。基于TLP测试数据应用分段线性建模方法构建了芯片应对静电放电干扰的模型。该文还根据二极管的等效电路及其数据手册的伏安特性数据构建了瞬态电压抑制(TVS)二极管模型，并通过TLP测试进行验证。同时，结合上述两个模型，开展了芯片静电放电干扰的协同防护设计方法研究，并应用实例验证了芯片的协同防护设计方法的可行性。该方法实现了用仿真模拟的方式进行芯片的协同防护设计，能够节约设计成本和时间。Abstract: With the development trend of miniaturization, high density and high speed of electronic equipment, integrated circuit, as the basic core unit of electronic equipment, is also developing in this direction, which brings more and more serious problems of electromagnetic compatibility. Among them, the problem of electrostatic discharge has attracted more and more attention of designers, producers and users. In this paper, the chip is tested by Transmission Line Pulse (TLP) method, and the volt ampere characteristic data of the device in response to electrostatic discharge interference are obtained. Based on the TLP test data, the piecewise linear modeling method is applied to build the model of the chip to deal with the electrostatic discharge interference. Based on the equivalent circuit of the diode and the volt ampere characteristic data in its data book, the Transient Voltage Suppression (TVS) diode model is constructed and verified by TLP test. At the same time, combined with the above two models, this paper carries out the research on the collaborative protection design method of chip electrostatic discharge interference, and obtains the collaborative protection design process and examples of the chip. This method realizes the collaborative protection design of the chip by simulation, which can save the design cost and time.
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表 1 模型中的参数
拐点 瞬态电压(V) 瞬态电流(A) 电阻(Ω) 0 0 0 – 1 31.8 0.050 1 634.730 5 2 44 0.429 –602.532 1 3 102 3.79 –14.941 7 4 113 4.34 2.743 231 5 125 4.88 2.222 222 6 136 5.31 3.359 173 7 75.1 6.69 –69.711 83 
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表 2 TVS 二极管击穿电压参数对比(V)
序号 TVS型号 数据手册的击穿
电压实测击穿
电压仿真击穿
电压1 SMDJ13A 14.4～15.9 16.31 16.57 2 SMDJ40A 44.1～49.1 47.8 47.52
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表 3 TVS 二极管最大钳位电压参数对比(V)
序号 TVS型号 数据手册的
钳位电压实测钳位电压 仿真钳位电压 1 SMDJ13A 21.5 17.0 19.5 2 SMDJ40A 64.5 50.3 52.0
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