多比特相位量化数字射频存贮技术及寄生电平
Multi-bit phase quantization RF memory and its spurious level
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摘要: 该文讨论多比特相位量化的原理和方法,给出易于单片集成的相位量化器的拓扑结构形式;研究了影响寄生电平的因素,给出了寄生电平与量化比特数的表示式,并着重讨论了相位量化器输入的I,Q信号幅、相不平衡对寄生电平的影响。
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关键词:
- 数字射频存贮器; 相位量化; 寄生电平
Abstract: The principle of multi-bit Phase Quantization Digital RF Memory (PQDRFM) and the implementation of Phase Quantizer (PQ) are discussed. The topology of PQ which is easy to monolithic integration is given. The factors affecting the spurious level of PQDRFM are investigated and the expression of the relationship of spurious level via the quantization bit number is given. The emphasis is put on the effect of the unbalance of PQ input amplitude and phase on the spurious level. -
W.M. Schnaitter, et al., A 0.5GHz CMOS digital RF memory chip, IEEE J. of Solid-State Circuits, 1986, SC-21(5), 720-726.[2]M. Gary.[J].H. William, H. Marty, et al., 500MHz GaAs digital RF memory modulator IC, Proc. of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium, Austin, TX, USA:Systems Processes Engineering Corp (SPEC.1996,:-[3]D.C. Schleher, Eletronic Warfare in the Information Age, Boston, London, Artech House, Inc 2000, Chapter 5, 5.2. ［4］T.T. Vu, M. Hattis, A GaAS phase digitizing and summing system for microwave signal storage,IEEE J. of Solid-State Circuits, 1989, SC-24(1), 104-117.[4]周国富,相位量化数字射频存贮器的寄生信号性能分析,电子学报,1992,20(12),26-31 -
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