SOI结构M-Z型调制器的有限元法分析
FINITE ELEMENT ANALYSIS OF THE SOI STRUCTURE M-Z INTERFEROMETRIC MODULATOR
-
摘要: 本文提出了采用有限元法分析SOI(Silicon on Insulator)结构M-Z(Mach-Zehnder)干涉型调制器的新方法。该方法在大截面单模SOI脊形波导理论的基础上,根据等离子体色散效应分析了这种调制器的电光调制机理;根据有限元法分析了p+n结大注入时该调制器的电学性质,从而为实际研制成这种干涉型调制器打下了理论基础。
-
关键词:
- 集成光学; 调制器; 有限元法; SOI
Abstract: A new method for analysing SOI (Silicon on Insulator) Sructure Mach-Zehnder interferometric modulator by using finite element method is put forward. On the basis of the theory of the single-mode SOI rib optical waveguides with large cross-section, the electro-optic modulating mechanism of the modulator is investigated by using the plasma dispersion effect, and the electrical characteristics of the device is analysed by using the finie element method at p+n junction large injected. So the method provides a basis of the theory for the device to be fabricated. -
Mayer R A, Jung K H, Lee W D, et al. Optics Lett., 1992, 17(24): 1812-1814.[2]Fischer U, Zinke T, Schuppert B, et al. Electron[J].Lett.1994, 30(5):406-408[3]周乐柱.电子学报,1994, 22(3): 77-85.[4]Adams M J, Ritchie S, Rbertson M J. Appl. Phys. Lett., 1988, 48(13): 820-822.[5]刘育梁,刘思科.光学学报,1991, 11(8):727-732.[6]Soref R A, Schmidtchen J, Petermann K. IEEE J. of QE, 1991,QE-27(8):1971-1973.[7]Pirnat T,Fiedman L, Soref R A. J. Appl. Phys., 1991, 70(8): 3355-3359.[8]Vablonovitch E, Swanson R M, et al. Appl. Phys. Lett., 1986, 48(3): 245-247.[9]赵策洲,刘恩科,李国正.光学学报,1994, 14(7): 783-784. -
计量
- 文章访问数: 2620
- HTML全文浏览量: 116
- PDF下载量: 486
- 被引次数: 0
下载:
