利用反向补偿原理控制硅CVD外延层中的金属杂质和微缺陷
CONTROLLING METALLIC IMPURITY AND MICRODEFECT IN SILICON CVD EPITAXY LAYER USING CONTRARY COMPENSATION
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摘要: 本文分析了硅CVD外延生长中金属杂质沾污、吸附-解吸机理模型和微缺分布规律,提出了用反向补偿原理优化外延工艺,有效地解决了硅外延层的金属杂质和微缺陷。Abstract: This paper analyzes the mechanism models of metallic impurity infection and adsorption-desorption, and the distribution law of microdefect in growing of silicon CVD epitaxy, and then a new epitaxy technology is proposed, which is optimized by using contrary compensation, and by which the metallic impurity and microdefect in silicon epitaxy layer are reduced effectively.
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