Zn、Zn-Cd在In_xGa_(1-x)As中扩散的研究
STUDY OF Zn, Zn-Cd DIFFUSION IN In_xGa_1-xAs
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摘要: 本文利用ZnAs2、ZnAs2+Cd作扩散源,研究了Zn、Zn-Cd在InxGa1-xAs中的扩散。给出了扩散温度和扩散时间,扩散源的种类和材料的组份对xj-t1/2关系的影响,Zn在InxGa1-xAs中的扩散速度(xj2/t)较Zn-Cd在InxGa1-xAs中的快。在500600℃,Zn在InxGa1-xAs的表面浓度为1101921020cm-3。Zn在InxGa1-xAs中的表面浓度较在InP中的高。利用InxGa1-xAs作1.3m发光管的接触层可使接触电阻降低。
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Abstract: The diffusion of Zn, Zn-Cd in InxGa1-xAs is investigated using ZnAs2 and ZnAsa+Cd as the diffusion source. The effect of the diffusion temperature, diffusion time, variety of the diffusion source and composition of the material on the relation of the xj-t1/2 is given. The diffusion velocity (xj2/t) of the Zn in InxGa1-xAs is faster than that of the Zn-Cd in InxGa1-xAs. The surface hole concentration of Zn in InxGa1-xAs is 11019-21020 cm-2 at 500-600℃. At the same diffusion condition, the surface concentration of Zn in InxGa1-xAs is higher than that of Zn in InP. Reducing of contact resistance by use of InxGa1-xAs contact layer for 1.3m LED can be expected. -
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