SiC表面氢化研究

罗小蓉; 张波; 李肇基; 龚敏

SiC表面氢化研究

罗小蓉^①;张波,
张波,
李肇基,
龚敏

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出版历程
- 收稿日期: 2005-02-02
- 修回日期: 2005-07-08
- 刊出日期: 2006-11-19

Study on the Hydrogenation of SiC Surface

摘要

摘要: 该文提出6H-SiC ( 0001)/SiO2间过渡层的概念和过渡层结构，通过分析过渡层与HF溶液的反应机理，建立湿化学处理中的SiC表面氢化模型。模型以氢钝化SiC表面悬挂键，降低SiC表面的界面态密度，消除了费米能级钉扎，获得理想的SiC表面。将此模型用于SiC/金属接触的SiC表面处理，在100℃以下制备了理想因子n=1.2~1.25的肖特基结和比接触电阻＝510-3 cm2~710-3 cm2的SiC欧姆接触，其优点在于不仅避免了欧姆接触800~1200℃的高温合金，而且改善了肖特基接触的电学特性。SiC表面模型与实验结果吻合较好。
- 过渡层; 氢化; 界面态; 费米能级钉扎; 理想因子
Abstract: The conception and the structure of transition layer of 6H-SiC (0001)/ SiO2 are proposed in this paper. The hydrogenation model of SiC surface is developed by analyzing the reaction mechanism of SiC surface and HF solution. The density of surface states is lowered to unpin the Fermi level because the hydrogen passivated dangling bonds of the surface. The ideal SiC surface is formed. The model is applied to treat SiC surface of the SiC/ metal contacts, Schottky junctions with ideality factor n=1.20~1.25 and Ohmic contacts with ＝510-3 cm2~710-3 cm2 are obtained under the condition of below 100℃. Its advantages lie in not only avoiding the annealing at 800~1200℃ for Ohmic contacts, but also improving the electrical performances of the Schottky barrier contacts. The hydrogenation model of SiC surface is good agreement with experiments.

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参考文献(1)

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