NTDCZSi中辐照施主的研究
INVESTIGATION OF IRRADIATION DONOR IN NTD CZ SI
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摘要: 本文对中子嬗变掺杂直拉硅(NTDCZSi)中辐照施主(ID)的退火行为和性质进行了研究,并探讨了不同中子辐照剂量和氧、碳含量对辐照施主形成的影响。首次报道了低于750℃热处理所产生的施主平台现象,并分别利用低温Hall测量和透射电镜对其进行了研究。结果表明,ID在禁带中产生～20meV的浅施主能级,其电活性起源于硅和二氧化硅沉淀的界面态。
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关键词:
- 中子辐照直拉硅; 辐照施主; 施主平台
Abstract: The annealing behaviour and property of irradiation donor (ID) in NTDCZSi have been studied by using the Hall effect measurements and TEM. In addidon, the effects of a variety of neutron doses and impurity (oxygen and carbon) concentrations on the formation of ID are discussed. The phenomenon of Donor plateau is discovered for the first time. The experimental results show that ID creates about a 20 meV donor level in the forbidden band, which originates from the interface states of precipitated Si/SiO2. -
徐岳生等,NTDCZSi的本征吸除效应,1988年硅材料学术会议论文集,河北 北戴河,第524页.[2]孟祥提,电子学报,1986年,第2期,第15页.[3]R. T. Young, et al., J. Appl. phys., 49 (1978), 4752.[4]Л.С.Смирнов著,王正元,杜光庭译,半导体的反应方法掺杂,科学出版社,1981年,第73-120页.[5]J. Bourgoin, et al., Point Defects in Semiconductors II, Germany, Springer-Verlag, Berlin Heidelberg, (1983), P. 247.[6]曹建中等,电子技术与测试,1986年,第1期,第25页. -
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