-Si∶H光电发射的漂移场模型
-Si:H PHOTOEMISSIVE MODEL WITH DRIFT ELECTRIC FIELD
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摘要: 本文分析了扩散型或漂移型或具有电荷放大效应的光阴极的量子效率。提出了具有内场或外场的-Si∶H光电发射模型。其结构是p-i-n -Si∶H/Bi2S3或SnO2--Si∶H-Al∶Cs∶O。估算了它们的量子效率和积分灵敏度。二者的量子效率为1-10,灵敏度为103-105A/lm。外场模型的实验表明,结构设计是正确的。Abstract: The quantum efficiency of photocathodes which are diffusion type or drift type, or which produce charge amplification effect in high field is analysed. a-Si:H photoemissive model with internal or external electric field is presented. Its structure is p-i-n -Si:H/Bi2S3 or SnO2--Si:H-Al:Cs:O. Its quantum efficiency and photosensitivity are estirnated. They are 1-102 and 103-105 A/lm respectively. The experimental results of the photoemissive model with external electric field show that the structural design is correct.
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