大通量辐照的NTD CZ Si 高温退火行为
HGIH-TEMPERATURE ANNEALING BEHAVIOUR OF NTD CZ Si IRRADIATED BY HIGH NEUTRON FLUENCE
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摘要: 本文研究了大通量辐照(1018n/cm2)的NTD CZ在750-1200℃范围内退火的行为。发现在该温度区间内会产生高浓度的中照施主,最高可达到1016cm-3。只有在高于1100℃退火才能获得准确的目标电阻率.探讨了大通量辐照NTD CZ Si的退火工艺,中照施主的形成及其消除条件。Abstract: High temperature (750-1900℃) annealing behaviour of NTD CZ Si irradiated by high neutron fluence (1018 n/cm) is investigated. It is found that neutron irradiation induced donor (NIID) with high concentration can be produced within the temperature range, die highest concentration of the donors can arrive in value about 1016cm-3. Only if annealing temperature exceeds 1100℃, the accurate aim rwistivity can be obtained. The annealing technology for the NTD CZ Si and the condition of appearance and annihilation for NIID are studied.
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河北工学院半导体材料研究室,敏感器件级NTD Si的退火工艺,河北工学院材料研究中心内部资料,1986年,第2-3页.[2]东北工学院,热处理对硅单晶性能影响的研究,全国硅材料经验交流会资料汇编,1979年,pp. 217-227.[3]杨洪林,直拉硅单晶的热处理,第三届全国半导体集成电路及硅材料学术会议论文集(摘要),1983年,pp. 26-27.[4]J. M. Meese, et al., Neutron Transmutation Doping in Semiconductors, ed. R. D. Larrabee, Plenum Press, New York, London, 1980, pp. 101-103.[5]B. J. Baliga, Neutron Transmutation Doping in Semiconductors, ed. R. D. Larrabee, Plenum Press, New York, London, 1984, pp. 167-186.[6]J. W. Cleland, N. Fukuoka, Neutron Transmutation Doping in Semiconductors, ed R. D. Larrabee, Plenum Press, New York, London, 1980, pp. 55-58.[7]Wang Zhengyuan, Lin Langying, Neutron Transmutation Doping in Semiconductors, ed. R. D. Larrabee, Plenum Press, New York, London, 1984, pp. 311-326.[8]Л.C.斯米尔诺夫著,王正元,林光庭译,半导体的核反应方法渗杂,科学出版社,1986年,pp. 78-118. -
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