硅CVD外延自掺杂效应的分析研究
RESEARCH ON REDUCING THE SELF-DOPING DURING SILICON CVD EPITAXY
-
摘要: 本文首先对自掺杂机理进行了分析。并采用反向补偿原理,吸附-解吸、滞流层静态-动态转换等,对工艺进行优化,在通常条件下有效地控制了自掺杂。Abstract: This paper, first, analyzes self-doping mechanism, then develops an optimization technology by using the contrary compensation principle, adsorption-desorption mechanism and transform of viscous flow layer between static and dymanic conditons. It results in controlling efffectively self-doping under normal condition.
-
邓志杰.稀有金属,1994, 18(2): 143-149.[2]刘玉岭.半导体技术,1993, (3): 21-27.[3]Meyerson B S. Appl. Phy.,Lett., 1986, 48(12): 797-799.[4]Sinvan G R. J. Electrochem. Soc., 1980, 127(6): 1344-1346.[5]Zhou Z H. J. Vac. Sci. Technology, 1991, B9(2): 374-376.[6]Srinvasan S R. Slid State Tech., 1981, 124(1):101-104.[7]黄汉尧,李乃平.半导体器件工艺原理.上海:上海科技出版社,1985,45-54.[8]刘玉岭,等.实用发明创造工程学.石家庄:河北科技出版社，1993,269-274. -
计量
- 文章访问数: 2367
- HTML全文浏览量: 160
- PDF下载量: 443
- 被引次数: 0
下载:
