激光触发光导开关产生超短电磁脉冲的实验研究
AN EXPERIMENTAL STUDY ON PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES
-
摘要: 本文介绍了用光导开关和微带线结构产生电脉冲的实验装置,研究了激光能量和偏置电压对光导开关输出超短电脉冲的影响和三种尺寸光导开关的特性,测得了一种低掺杂Cr:GaAs材料的载流子寿命约为1.8ns,显示了这种装置用作高速光探测器的可能性。Abstract: By using the apparatus given in this paper the experiment on photo-conductive switches was conducted to investigate the affection of both the laser energy and bias voltage on switch output. By means of the same set-up, the carrier lifetime of Cr: GaAs used was measured to be as 1.8ns, and the possibility of the set-up to be utilized as a high speed photodetector has been demonstrated.
-
郭开周.电子科学学刊,1993, 15(1): 60-68.[2]Hadizad P, Hur J H, et al. J. Appl. Phys., 1992, 71(7): 3586-3592.[3]Eiichi Sano, Tsugumichi Shibata. IEEE J, of QE, 1990, QE-26(2): 372-399.[4][4][5]李学清,郭开周,陈增圭.电子科学学刊,1993, 15(3): 201-203.[6]李学清,郭开周,周权.电子学报,1993, 21(9): 20-26, 48.[7]Lee Chi H. IEEE Trans. on ED, 1990, ED-37(12): 2426-2938.[8]Paulus P, Brinker W, Jager D. IEEE J. of QE, 1986, QE-22(1): 108-111.[9]Zutavern Fred J, et al. IEEE Trans. on ED, 1991, ED-38(4): 696-700. -
计量
- 文章访问数: 2042
- HTML全文浏览量: 62
- PDF下载量: 433
- 被引次数: 0
下载:
