高能离子注入硅的无损表征
NON-DESTRUCTIVE CHARACTERIZATION OF MeV ION IMPLANTED SILICON
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摘要: 将能量为3MeV,剂量为51015cm-2的硼离子注入(100)硅单晶,经1050℃,20s退火形成导电埋层。本文应用X-射线双晶衍射分析高能离子注入硅的损伤演变。通过分析高能离子注入体系和自由载流子等离子体效应的光学响应,应用计算机模拟红外反射谱,获得了载流子分布,迁移率和高能注入离子的电激活率。
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关键词:
- 高能; 离子注入; 无损表征; 硅
Abstract: Boron ions have been implanted into Si at an incident energy of 3MeV to a dose of 51015cm-2. Buried conductive layers are formed in Si substrate after annealing at 1050℃ for 20s. Annealing characteristics of damage has been examined by double-crystal X-ray diffraction. By detailed theoretical analysis of character of high energy ion implantation and optical response of free-carrier plasma effects, electrical activaton of implanted boron ions has been investigated by computer simulation of the IR reflection interference spectra. -
Borland J, Koelsch R. Solid State Technology, 1993 36(12): 28-36.[2]Yu Yuehui, et al. Appl[J].Surf. Sci.1989, 40:145-150 -
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