1.3m InGaAsP/InP双异质结发光二极管的研究
STUDY OF 1.3m InGaAsP/InP DOUBLE HETEROJUNCTION LIGHT EMITTING DIODES
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摘要: 正 随着光纤通信系统的发展,长波(1.11.7m)光源的研究巳广泛引起重视。因为在这一波长范围内,石英光纤具有低的传输损耗和材料色散。文献[1]指出,用InGaAsP/InP发光二极管(=1.3m)作光源的系统的传输容量比目前常见的用GaAlAs/GaAs发光
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关键词:
Abstract: InGaAsP/InP double heterostructure material was grown by liquid phase epitaxial technique and Burrus type light emitting diodes were made from it. The output power is 1 m W at 100mA driving current. The emission wavelength is 1.3 m and the operating time has reached 3 103 hours.The I-V, I-P charaeteristics and the emission spectrum of the light emitting diodes are discussed. And it is pointed out that the structure of the device and the fabrieation technique do have influence upon the characteristics of the light emitting diodes,and the emission spectra of certain light emitting diodes have two peaks, it is due to the p-n junction displacement. -
W. M. Muska, et al., Electron Lett., 13(1977), 605.[2]A. G. Dentai, Electron Lett., 13(1977), 484.[5]安部正幸,信学技报,78(1979), 73.[6]王祥熙,方敦辅等,半导体光电,1981年,第2期,第209页.[7]杨易等,半导体光电,1981年,第2期,第199页.[8]陈自姚等,半导体光电,1981年,第2期,第207页.[9]邬祥生等,半导体光电,1981年,第2期,第186页.[10]陈瑞璋等,光纤通讯,1980年,第2期,第89页.[11]何樑昌等,通信学报,(待发表).[12]宇治俊男,昭和54年通信学会半导体材料部门全国大会演讲集,1977年,第326页. -
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