1.3m InGaAsP/InP双异质结发光二极管的研究
STUDY OF 1.3m InGaAsP/InP DOUBLE HETEROJUNCTION LIGHT EMITTING DIODES
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摘要: 正 随着光纤通信系统的发展,长波(1.11.7m)光源的研究巳广泛引起重视。因为在这一波长范围内,石英光纤具有低的传输损耗和材料色散。文献[1]指出,用InGaAsP/InP发光二极管(=1.3m)作光源的系统的传输容量比目前常见的用GaAlAs/GaAs发光
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关键词:
Abstract: InGaAsP/InP double heterostructure material was grown by liquid phase epitaxial technique and Burrus type light emitting diodes were made from it. The output power is 1 m W at 100mA driving current. The emission wavelength is 1.3 m and the operating time has reached 3 103 hours.The I-V, I-P charaeteristics and the emission spectrum of the light emitting diodes are discussed. And it is pointed out that the structure of the device and the fabrieation technique do have influence upon the characteristics of the light emitting diodes,and the emission spectra of certain light emitting diodes have two peaks, it is due to the p-n junction displacement. -
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