高速半导体激光二极管的微波特性研究
THE STUDY OF THE MICROWAVE CHARACTERICTICS OF THE HIGH SPEED SEMICONDUCTOR LASER DIODE
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摘要: 本文通过测试器件的微波S参量,对半导体量子阱激光二极管的微波特性进行了深入的研究。在计及器件本身特性以及器件在微波频率下的寄生参量的前提下给出了器件微波等效电路和相应的数字模拟方法。由测量出的微波S11参量建立适当的目标函数,选择正确的计算方法,成功地模拟出电路各参量。实际计算结果与测出的器件S11参量比较,表明我们给出的等效电路是正确的,相应的计算方法是成功的。Abstract: This paper presents a deep researching of the microwave characteristics of a quantum well laser diode with the diode s microwave S parameters. By considering the characteristics and microwave packing effects of the device, a microwave equivalent circuit of the semiconductor quantum well laser and the numerical analogous methods for it are proposed. By devoloping a proper object function and selecting a correct calculation method, the element parameters of the circuit are succesfully simulated under the measured microwave S11 parameters. By comparing the calculated results and the measured ones, it shows that presented equivalent circuit is correct and the calculation method is effective.
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Giasi A, Gopinath A, IEEE Trans. on MTT. 1990. MTT-38(3): 673-675.[2]Bercel T, ef al. IEEE Trans. on MTT. 1992. MTT-40(5): 910-915.[3]Lau K Y, et al. IEEE. J. of QE, 1985, QE-21(2): 121-138.[4]Su C B, et al. IEEE J. of QE. 1986, QE-22(9): 1566-1578.[5]Maeda M, et al. IEEE Trans on COM, 1978,COM-36(7): 1076-1081.[6]蔡宜三.最优化与最优控制.北京:油华大学出版社,1982,第六章,236-297. -
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