砷化镓气相掺硫外延和亚微米薄层的制备
THE SULPHUR INCORPORATION AND THE GROWTH OFSUBMICRON THIN FILM IN GaAs VAPOR PHASEEPITAXY SYSTEM
-
摘要: 本文介绍了Ga-AsCl3-H2体系,研究了气相外延时硫的掺杂行为,讨论了硫的掺杂机理和生长了亚微米薄层。制得的亚微米外延层的质量表明,表面形貌良好,缺陷少,重复性好。典型的电学性质为:当厚度0.4m和浓度为121017/cm3时,击穿电压VB=710V。在单层和多层外延结构中,界面浓度基本是突变的,过渡区约0.1m。这些外延片已用于制备变容管和远红外探测器等。
-
关键词:
Abstract: The doping behavior of sulphur in GaAs vapor phase epitaxy has been studied with the Ga-AsCl3-H2 system. The doping machamsm of sulphur has been discussed and submieron epilayers have been grown. It has been shown that the epitaxial layer obtained has high qualities and the reprodueibility of epitaxial growth is good. The typical electrical properties of epitaxial layer obtained are that the breakdown voltage is about 7-10V and the carrier concentration is about 1-2 1017/cm3 when epilayer thickness is less than 0.4m. For the single layer and the multilayer structures, the concentration drop in interface between the active layer and the buffer layer or substrate are sharp and the width of interface region is about 0.1m. The epilayers obtained have been used to fabricate the microwave devices such as varactor and far infrared detectors. -
彭瑞伍、孙裳珠、沈松华,金属学报,16 (1980), 308.[2]彭瑞伍、孙裳珠、沈松华,1977年全国砷化稼及其Ⅲ-V族化合物半导体会议文集,上海科学技术出版社,第254页.[3]彭瑞伍、孙裳珠、沈松华,电子学报,1(1978), 23.[5]Y. G. Sidorov and L. F. Vasilova, J. Electrochem. Sec., 123(1976), 698.[6]C. M. Wolfe and G. E. Stillman, Solid-st. Communi, 12(1973), 283.[7]彭瑞伍、孙裳珠、沈松华,电子与自动化,6(1977), 1.[8]M .Heyen, H. Bruch, K. H. Bachem and P. Balk, J. Cryst. Growth, 42(1977), 127.[11]L. C. Luther and J. V. Dilorenzo, J. Electrochem. Sec., 122(1975), 760.[12]Н.Х.Абрикосов,В.С.Зепсков,Легированные полупрованные полупроводники,Изд.Наука,Москва,1975,стр. 170.[13]N. Goldsmith and W. Oshinsky, RCA. Rev., 24(1963), 549.[14]P. Rai-Choudhury, J. Cryst, Growth, 11(1971), 113.[15]A. Boucher and L. Hollan, J. Eleetrochem. Soc., 117(1970), 932.[16]Ю.Г.Сидоов,А.В.Сидоова,С.А.Двореечкий,ж,Неор.Матер., 8(1972),1738.[17]M.Tabe and H. Nakamura, J. Electrochem. Soc., 126(1979), 822.[18]L. Hollan, M. Boulou and J. P. Chane, JEM, 10(1981), 193.[19]丁永庆、彭瑞伍、陆凤贞,科技通讯,1(1979), 11.[20]陈自姚、邵永富、彭瑞伍,科技通讯,2 (1980), 20;科学通报即将发表.[21]彭瑞伍,第五届国际气相生长和外延会议/第五届美国晶体生长会议特约报告,1981. 7.美国,圣地亚哥. -
计量
- 文章访问数: 1719
- HTML全文浏览量: 110
- PDF下载量: 338
- 被引次数: 0
下载:
