砷化镓气相掺硫外延和亚微米薄层的制备
THE SULPHUR INCORPORATION AND THE GROWTH OFSUBMICRON THIN FILM IN GaAs VAPOR PHASEEPITAXY SYSTEM
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摘要: 本文介绍了Ga-AsCl3-H2体系,研究了气相外延时硫的掺杂行为,讨论了硫的掺杂机理和生长了亚微米薄层。制得的亚微米外延层的质量表明,表面形貌良好,缺陷少,重复性好。典型的电学性质为:当厚度0.4m和浓度为121017/cm3时,击穿电压VB=710V。在单层和多层外延结构中,界面浓度基本是突变的,过渡区约0.1m。这些外延片已用于制备变容管和远红外探测器等。
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Abstract: The doping behavior of sulphur in GaAs vapor phase epitaxy has been studied with the Ga-AsCl3-H2 system. The doping machamsm of sulphur has been discussed and submieron epilayers have been grown. It has been shown that the epitaxial layer obtained has high qualities and the reprodueibility of epitaxial growth is good. The typical electrical properties of epitaxial layer obtained are that the breakdown voltage is about 7-10V and the carrier concentration is about 1-2 1017/cm3 when epilayer thickness is less than 0.4m. For the single layer and the multilayer structures, the concentration drop in interface between the active layer and the buffer layer or substrate are sharp and the width of interface region is about 0.1m. The epilayers obtained have been used to fabricate the microwave devices such as varactor and far infrared detectors. -
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