InP上Al膜的阳极氧化及其特性研究
STUDY OF THE ANODIZATION OF Al FILM ON InP SUBSTRATE AND ITS PROPERTIES
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摘要: 本文报道了半导体InP上Al膜阳极氧化的研究,并用AES,V-V,DLTS和椭圆仪等测试方法研究了氧化膜的稳定性、电学特性、组分的纵向分布以及Al2O3/InP的界面特性,研究结果表明,阳极氧化Al2O3的介电常数为11～12,Al2O3/InP界面存在一个能量上连续分布的电子陷阱,DLTS峰值对应的能级位置约在Ec-Ec=0.5eV,其俘获截面约为10-15cm2,Al2O3/InP的界面态密度为1011cm-2eV-1。阳极氧化Al2O3的稳定性要比InP自身氧化物好得多,更适于用作器件的钝化保护和扩散掩蔽膜。
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关键词:
- 半导体界面; 阳极氧化; 介质薄膜
Abstract: The anodization of Al film on InP substrate and the properties of anodic Al2O3/lnP have been investigated by AES, DLTS, I-V, C-V and ellipsometer. The results show that the anodic oxide Al2O3 has the permitivity of 11-12 and the resistivity of 1.31013 ohm-cm. Interface state density at Al2O3/InP is about 1011cm-2eV-1. DLTS reveals that there is continuously-distributed interface electron traps at Al2O3/lnP interface. Anodic oxide Al2O3 exhibits good stability and electrical properties and could be used for passivation, diffusion mask and gate insulator etc. -
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