真空烘烤和Cs蒸汽对单通道电子倍增器某些电性能的影响
INFLUENCE OF BAKE-OUT AND Cs VAPOUR ON SOME PROPERTIES OF CHANNEL ELECTRON MULTIPLIER(CEM) IN VACUUM
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摘要: 正 单通道电子倍增器(简称CEM)作为辐射探测器已应用于有关科技领域。本实验的目的在于了解在包含光电阴极和CEM的器件内,烘烤温度和Cs蒸汽对CEM的电阻和电子增益的影响。 (一)实验装置和测量方法 实验测量装置原理图如图1所示
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Abstract: In this paper, the changes of the resistance and the electron gain of the CEM after bake-out at different temperatures and treatment with Cs are examined. It is found, that the transition temperature of the resistance from reversible change into irreversible is 250℃ or higher. A method of determining the optimum gain of the CEM during heating by means of measuring the resistance changes is proposed. The damaging action of Cs to CEM is investigated and proper protecting means is proposed. It is shown, that the method of convering two ends of the CEM with nickel caps is an effective one for preventing the CEM from being damaged by Cs during Cs treatment.
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