宽频带高增益微带天线元研究
STUDY ON THE WIDE-BAND AND HIGH-GAIN MICROSTRIP ANTENNA ELEMENT
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摘要: 本文提出了一种微带天线元的新结构,它具有宽频带和高增益特性。用谱域法推导了特征方程。用等效电路观点得到输入驻波比的频率特性公式、数值计算设计了一个C波段微带天线元。实测驻波比带宽达16％(VSWR1.5)或25％(VSWR2),增益在10.2～11.3 dB范围。这表明其带宽和增益都比普通微带天线元的带宽(5～6)％和增益(6～7)dB大得多。
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关键词:
- 微带天线; 宽频带; 高增益
Abstract: A novel three layers microstrip antenna elect that has the advantages of wide band and high gain is proposed. The characteristic equation and the frequency characteristic formulas of the input stand wave ratio are obtained by using the spectral domain method and equivalent circuit method, respectively. With the aid of the numerical results, a C-band microstrip antenna element with band width of 16 (SWR1.5) or 25 (VSWR2) and gain of 10.2-11.3 dB is developed, which are much larger than the bandwidth of 5-6 and the gin of 6-7 dB of the common microstrip antenna element. -
C. Wood, IEE Proc. 1980, 127(4): 231-234.[2]Derneryd A G, et al. IEEE Trans. on AP. 1981, AP-29(1): 140-141.[3]Hall P S, et al. Electron. Lett., 1979, 15(15): 458-459.[4]Poddat D R, et al. IEEE Tans. on AP, 1983, AP-31(1): 193-194.[5]Kaloi C M, et al. IEEE Trans. on AP, 1981, AP-29(2) 343-346.[6]Kaloi C M, et al. hlicrostrip Backfire Antenna. U.S.Patent :10.4,347,517, Aug.31,1982.[7]蔡建明,姚德森.宽频带高增益微带天线元研究.长沙:国防科技大学四系内部报告,1991.[8]Araki K, Itoh T. IEEE Trans. on AP, 1981, AP-29(1):84-89.[9]Araki K, et al. IEEE Trans. on AP, 1986, AP-34(12): 1390-1395.[10]Araki K, et al. IEEE Trans. on MTT, 1982, MTT-30(2): 147-153.[11]Itoh T, et al. IEEE Trans. on .AP, 1981, AP-29(1):63-69. -
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