p-InP与Au-Zn、Ti/Au、Pd/Au和Ti/Pd/Au接触时的界面性质和电学特性
INTERACTIONS OF THE p-InP WITH Au-Zn, Ti/Au, Pd/Au Ti/Pd/Au AT INTERFACE AND THEIR ELECTRICAL PROPERTIES
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摘要: 本文用俄歇电子能谱和扫描电子显微镜等方法研究了p-InP与Au-Zn,Ti/Au,Pd/Au和Ti/Pd/Au接触在热处理过程中的互扩散现象.结果表明:Au较Ti、Pd易向p-InP内扩散。研究了 p-InP/Au-Zn体系的合金化条件对比接触电阻(c)的影响。在 450℃热处理12 min或在 350℃热处理30 min,均可得到较低的比接触电阻,这表明界面处的互扩散程度是决定比接触电阻的重要因素。Au-Zn合金在蒸发和热处理的过程中,Zn趋向于凝集在最表面层,而不能充分发挥它在InP中的受主作用,这是该体系的c值偏高的原因之一。
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Abstract: In this report, interdiffusion of the p-IuP with Au-Zn Ti/Au, Pd/Au, and Ti/Pd/ Au at interface has been investigated by Auger electron spectroscopy and electron spectroscopy for chemical analysis. The surfaco morphology for the heat treatment are observed with scanning electron microscopy.It is found that the in-diffusion of Au is easier than that of Pd and Ti, and the out-diffusion of In is easier than that of P. The effects of the alloying temperature and time on the specific contact resistance of the p-InP/Zu-Zn system are studied. The lower specific contact resistance, c=2.4--2.710-4 cm2, is obtained when alloying at 450℃ for 2 min or at 350℃ for 30 min. these results indicate that the specific contact resistance strongly depends on the interface interdiffusion degree. The Zn in Au-Zn alloy distributes onto the most surface layer of the p-InP/Au-Zn system during evaporation process and heat treatment. It may be one of the reasons for the higher specific contact resistance. -
E. H. Okelek, et al., Solid-State Electronics, 24 (1981) 99.[2]E. Kuphal, ibid, 24(1981), 69.[3]A. J. Vaiois, et al., ibid., 25(1982), 973.[4]H. Temkin, Appl. Phys. Lett., 36(1978), 444.[5]水海龙等,半导体光电,2(1981), 192.[6]L. P. Erickson, Thin Solid Film, 64(1979), 421.[7]C. L. Chang, et al., Electronics Lett., 18(1982),755.[8]水海龙等,电子学通讯,5(1982), 286.[9]K. Tabaie, et al., Appl. Phys. Lett., 40(1981),398.[10]A. K. Chin, et al., ibid., 41(1982), 555.[11]张桂成等,发光与显示,2(1982), 65. -
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