硅直接键合工艺对晶片平整度的要求
REQUIREMENT OF SILICON FLATNESS FOR SILICON DIRECT BONDING TECHNOLOGY
-
摘要: 本文用弹性力学近似,给出了键合工艺对硅片表面平整度的定量要求以及沾污粒子与孔洞大小之间的关系,并用X射线双晶衍射技术和红外透射图象对键合硅片进行了实验研究。Abstract: The influence of silicon slice flatness on bonding technology and the relation between foreign particle and resulting bubble are quantitatively presented by the elastic theory. It is demonstrated experimentally by X ray double crystal dif-fractometry and infrared transmission imager.
-
Lasky J B. Appl. Phys. Lett., 1986, 48(1): 78-80.[2]Nakagawa N, et al. 1800V bipolar-mode MOSFETs: a first application of SDB technique to a[3]power device. Proc. IEDM. CA, USA: 1986, 122-125.[4]Barth P W.Sensors and Actuators, 1990, A23(1): 919-926.[5]Lu S J. Sensors and Actuators, 1990, A23(1): 916-963.[6]Maszara W P. J. Electrochem. Soc., 1991, 138(1): 341-347.[7]Tong Q Y, et al. IEEE Electron Device Lett., 1991, 12(3): 101-103.[8]Maszara W P, et al. J. Appl. Phys., 1988, 64(10): 4943-4950.[9]Tong Q Y, et al. Electron Lett., 1991, 27(3): 288-289.[10]吴家龙.弹性力学.上海:同济大学出版社,1987,317-325.[11]徐芝伦.弹性力学教程.北京:高等教育出版社,1980,288-294.[12]黄庆安,等.电子科学学刊,1992,14(6): 574-578. -
计量
- 文章访问数: 2254
- HTML全文浏览量: 158
- PDF下载量: 776
- 被引次数: 0
下载:
