FET基波和谐波振荡器的大信号设计
THE LARGE-SIGNAL DESIGN FOR FET FUNDAMENTAL AND HARMONIC OSCILLATORS
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摘要: 本文根据测出的FET的小信号S参数和静态,I-V特性建立了场效应管的大信号模型,然后应用谐波平衡法对FET基波和谐波振荡器进行了分析和优化设计,得到了振荡器稳态时的电流值。并采用一种简化的CAD方法求出了最佳功率输出时的外电路参数。在此基础上,研制了基波和Q波段、二次谐波振荡器。实验结果与理论分析基本一致。Abstract: A large-signal model for GaAs FET is derived based on its small-signal S parmeter and DC characteristics. The harmonic balance algorithm is applied to analyze and optimize the FET fundamental and harmonic oscillators, and the values of steady current are obtained. In the solving process, a simplified CAD approach is used to obtained the parameters of matching network when the output power is maximum. Finally, a fundamental oscillator and a harmonic oscillator of Q-band are fabricated. The measurements show that the theoratical analysis and experimental results are in good agreement.
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F. Filicori, V.A. Monaco et al., IEEE Trans. on MTT, MTT-27(1979)12, 1043-1051.[2]吴万春,微波半导体电路CAA与CAD讲义,西安电子科技大学,西安,1987年.[3]廖敏,FET基波和谐波振荡器的研究,东南大学硕士研究生论文,南京,1991年1月.[4]苗敬峰,毫米波电路,东南大学出版社,南京,1988年. -
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