扫描电子束在绝缘衬底上生长单晶硅薄膜(SOI)的实验研究
THE GROWTH OF MONOCRYSTALLINE SILICON THIN FILM ON INSULATOR (SOI) BY SCANNING ELECTRON BEAM
-
摘要: 在绝缘衬底上生长单晶硅薄膜,即SOI技术,是近年发展起来研制三维集成电路的一项新技术。本文讨论了利用扫描电子束对淀积在SiO2上的多晶硅薄膜进行改性的实验。采用籽晶液相外延形成单晶硅薄膜。本实验的重点在于摸索电子束的功率密度、扫描速度、衬底的温度和样品结构等因素对形成单晶硅薄膜质量的影响。实验取得了较好的结果,获得了20025m2的单晶区。
-
关键词:
- 单晶硅薄膜; SOI技术; 材料改性
Abstract: An experiment for preparation of SOI films by using scanning electron beam to modify polycrystalline silicon on SiO2 is presented. This method takes on the lateral epitaxial growth of liquid phase crystallon to form monocrystal Si films. The effects of beam power density, scanning velocity, temperature of substrates and the construction of samples on the quality of the monocrystalline silicon films were discussed. A good experimental result has been obtained, the mono-crystalline silicon zone is nearly 20025m2. -
Gat A, et al. Appl. Phys. Lett., 1978，33(8): 775-778.[2]Ohmura Y, et al. IEEE Electron Devices Lett., 1983, EDL-4(3):57-59.[3]Emery K, et al. SPIE-Society of Photo-Optical Instrumentation Engineers, Vol-459, Laser Assisted Deposition, Etching and Doping, 1984:82-89.[4]Hopper G F, et al. Electron. Lett., 1984, 20(12): 500-501.[5]Kawamura S, et al. Laser-Induced Lateral Epitaxial Growth of Si over SiO2, Extended Abstracts of the Electrochem. Soc., Spring Meeting, Montreal, Canada; 1982,243-244.[6]Bradbury D R, et al. J.Appl. Phys., 1984, 55(2):519-523.[7]张旭光,李映雪,王阳元,朱忠伶.电子学报,1989,17(5): 1-7.[8]Shahidi, et al. Fabrication of CMOS on Ultrathin SOl obtained by Epitaxial Lateral Overgrowth and Chemical-Mechanical Polishing. IEDM-International Electron Devices Meeting-Technical Digest 1990, San Francisco, CA: Dec. 9-12, 1990, Sponsored by Electron Devices Society of IEEE: 25.2.1-25.2.4. -
计量
- 文章访问数: 2190
- HTML全文浏览量: 104
- PDF下载量: 497
- 被引次数: 0
下载:
