热解乙氧基铝制备次级电子发射膜
FABRICATION OF SECONDARY EMISSION FILM BY PYROLYZATION OF ALUMINIUM ETHOXIDE
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摘要: 利用某些有机烷氧基金属化合物的热分解,可在玻璃、金属、陶瓷或半导体基片上沉积相应的金属氧化物次级发射膜。例如:由乙氧基镁(或铝)的热解制得MgO(或Al2O3)膜。本工作由自制乙氧基铝和五氯化钼,在玻璃基底上热解沉积制得合适电阻率的次级发射膜Al2O3∶Mo.膜厚1000,电阻率107-108cm,最大次级电子发射系数 max=3.1,热解条件为450℃,12min。
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关键词:
- 次级电子发射膜; 热解沉积; 乙氧基铝
Abstract: A metal-oxide secondary emission film can be deposited on glass, ceramic or semiconductor substrates by thermal decomposition of an organo-metal alkoxide. For instance, MgO (or Al2O3) secondary emission film can be obtained from magnesium (or Aluminium) ethoxide thermal decomposition. In the present method, Al2O3: Mo secondary emission film has been made from thermal decomposition of home-made Aluminium ethoxide and Molybdenum pentachloride. The depositing conditions are T = 450℃ and t=12min for the about 1000 thickness of film to get. The maximum secondary emission coefficient and resistivity of the film are max=3.1, =107-109, cm respectively. -
C.A. Spindt, et al., Rev. Sci. Instrum., 36(1965), 775-779.[2]石川和雄,応用物理,38(1969),546-554.[3]Б.А.Вишняков,и др., Неорга Матер., 8(1972), 185-186.[4]И.М.Бронштейн, и др., Радиотехника и элетр., 14(1969), 2077-2079. -
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