双向负阻晶体管动态伏安特性的实验研究
STUDY ON THE DYNAMIC I-V CHARACTERISTICS OF BNRT
-
摘要: 本文研究了双向负阻晶体管(Bidirectional Negative Resistance Transistor,简称BNRT)在张弛振荡电路中的动态伏安特性。借助动态伏安特性对BNRT张弛振荡电路的一些性质进行了分析。实验结果与计算结果一致。本文还对改进器件结构的设计,以便使器件达到更高的振荡频率提供了理论依据。
-
关键词:
- 半导体器件; 负阻器件; 张弛振荡器
Abstract: Experimental investigation was carried out for the dynamic I-V characteris-tics of the bidirectional negative resistance transistor (BNRT) in the relaxation oscillation circuit. Some properties of the BNRT relaxation oscillation circuit were also analysed by means of the dynamic I-V characteristics. Experimental results agree with the computations. The direction for improving the device design is also pointed out in order to enhance the oscillation frequency. -
李凤银,周旋,李锦林,曹体伦,电子学报,1984年,第4期,第112页.[2]李凤银,周旋,李锦林,曹体伦,半导体学报,5(1984)6,698-701.[3]周旋,鲍秉乾,电子科学技术,15(1985)5,4-7.[4]余道衡,电子科学技术,17(1987)5,33-36.[5]裴留庆,郭汾,谢剑光,自然数周期序列与混沌,中国第七届电路与系统年会论文集,1987年,深圳, 13-18页.[6]余道衡,朱照宜,电子科学学刊,9(1987)2,176-180.[7]Wang Shou-wu, et al., PIEE, 69(1981), 130-139.[8]J. Millman, H. Taub, Pulse, Digital and Switching Waveforms, McGraw-Hill Book Co. Chapter 6, (1965).[9]刘文生,李锦林,取样技术原理与应用,科学出版社,1981年,第153-156页. -
计量
- 文章访问数: 2165
- HTML全文浏览量: 133
- PDF下载量: 519
- 被引次数: 0
下载:
