超薄的金属/LB绝缘膜/半导体结构的CV和I-V特性
C-V AND I-V CHARACTERISTICS OF ULTRATHIN METAL/LB INSULATING FILMS/SEMICONDUCTOR STRUCTURE
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摘要: 本文研究了超薄的金属/LB绝缘膜/半导体(MLS)结构的C-V和I-V特性,理论分析与实验结果相一致,结论如下:(1)超薄MLS结构具有正常的C-V特性和I-V特性;(2)以LB薄膜作为绝缘层可调整肖特基器件势垒高度。
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关键词:
- LB绝缘薄膜; C-V特性; I-V特性
Abstract: C-V and I-V characteristics of ultratllin metal/LB insulating films/semiconductor structure are studied. Theoretical analysis are well in accord with experimental results. The results indicate that: (1) Ultrathin MLS structure has normal C-V and I-V characteristics; (2) It is possible to modify the barrier height of Schottky devices by using LB thin films as insulators. -
专集,日本科学与技术,2(1987), 1-72.[2]任云珠等,固体电子学研究与进展,6(1986)4, 337- 341.[3]舒占永等,采用Langmluir-Blodgett技术制备MOCVD-InP MIS结构,1988年全国LB膜学术讨论会文集,河南,开封. -
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