Zn在InP中低温扩散的研究
A STUDY OF Zn DIFFUSION IN InP AT LOW TEMPERATURE
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摘要: 本文用Zn3P2源在闭管条件下研究了Zn在InP中的低温(520700℃)扩散。比较了用等温扩散和双温区扩散技术扩散后,样品的电学参数。结果表明:双温区扩散法可得到表面光亮,无损伤的高浓度表面层。该法已用于InGaAsP/InP双异质结发光管的制备工艺中,并制得了光功率1mW,串联电阻23的发光管。还讨论了Zn在InP中扩散时的行为,解释了低温(550℃)扩散过程中,等温扩散时出现的异常现象。
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Abstract: In this report the diffusion of Zn in InP at low temperature is investigated. The experiment is accomplished in an evacuated and sealed quartz ampoule using Zn3P2 as the source of Zn.The electrical characteristics of the samples obtained by the isotemperature process and the two-temperature process are compared. It is found that the two-temperature process may obtain a smooth, no damage and high-concentration surface layer. This process has been applied to fabricate InGaAsP/InP light emitting diodes, and the diodes obtained have an output power of about 1mW with a series resistance of 23. the behaviors of Zn diffusion in InP are discussed, and the anomalous phenomena in isotemperature diffusion at 550℃ are explained. -
L. L. Chang and H. C. Casey, Solid-state Electronics, 6(1964), 481.[2]A. Hooper, B. Tuck and A. J. Baker, Solid-state Electronics, 17(1974), 531.[4]E. A. Rezek, P. D. Wright and N. Holonyak, Jr., Solid-state Electronics, 21(1978), 325.[5]A. Hooper and B. Tuck, Solid-stale Electronics, 19(1976), 513.[6]K. Weise, Trans. AIMS, 230(1964), 271.[7]Yuchi Matsushima, Appl. Phys. Lett., 35(1979), 466.[8]R. S. Willams, Appl. Phys. Lett., 36(1980), 760.[9]张桂成等,科技通讯,1980年,第3期,第56页.[10]陈自姚,邵永富等,半导体光电,1981年,第2期,第207页.[11]M. B. Panish, J. Electrochem. Soc., 113(1966), 224[12]水海龙等,半导体光电,1981年,第2期,第163页.[13]P. K. Tien and B. I. Miller, Appl. Phys. Lett., 34(1979), 701.[15]Yoshihisa Yamamoto et al., Jap. J. Appl. Phys., 19(1980), 121. -
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