红外数字图象处理技术用于研究砷化镓材料中的缺陷形态分布
STUDY OF MORPHOLOGICAL DISTRIBUTION OF DEFECTS IN GaAs WAFERS BY INFRARED DIGITAL IMAGE PROCESSING
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摘要: 本文介绍了一种用于研究砷化镓材料中的缺陷(比如EL2吸收特性等)的新方法:将一束波长为1.11.5m的近红外光穿过一块厚度为48mm,直径为50mm的砷化镓材料,用红外摄象机TOSHIBA 8844摄取图象,并直接送入计算机图象处理系统DATASUD,材料中的非均匀性缺陷图象,即材料中的缺陷(EL2,位错等)在截面上的分布结构形状(十字形,网状,球粒形等)就可从屏幕上观察到。本文给出了为研究这类材料设计的ZHIMAG(ZHang IMAGe)图象处理软件包和应用ZHIMAG所获得的一些结果。ZHIMAG也适用于其它类型的图象处理。
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关键词:
- 红外图象; 砷化镓; 图象处理软件
Abstract: A new method is applied to characterize the defects in GaAs material (e.g. the absorption of EL2 centres). The method consists of transmitting a laser beam (=1.1-1.5 m) through the GaAs wafer of 4-8 mm thickness and 50 mm diameter. The image is received by the TOSHIBA 8844 camera and entered into the DATASUD computer image processing system. This image is displayed on a monitor permitting to observe the inhomogeneity (like cross, cells and volutes) of the EL2 and dislocation defects. This paper will introduce a specific image processing software for GaAs material, called ZHIMAG (ZHang IMAGe) and its applications in GaAs wafer. The software can be also applied to any other types of image processing. -
Fugui Zhang, Morphologie des Distributions de Defauts Dans GaAs-SI par Imagerie Infra-Rouge Numerique,These de doctorat, Montpellier, France, 1986.[2]J. Logowski, et al., Semi-insulating III-V Materials, Conf., Kahneeta, U. S. A., 1984, 130-135.[3]N. Yoyoda, et al., Defect Recongnition and Image Processing in III-V Compounds, Conf., la Grande Motte, France, 1985, 30-34.M. P. Scott, Defect Recongnition and Image Processing in III-V Compounds, Conf., La Grande Motte, France, 1985, 89-86.B. Goutheraux, Les Mesures de Conductivite Electrique en Cartographie, These Paris VI, 1985, 120-140.M. Asgarinia, Letude Experimentals des Defauts Dans GaAs-SI, Repport DEA, Montpellier, France, 1985,50-56.[4]M.R.Brozel.[J].et al., Three Dimensional Image of the Distribution of 1m Absorpton in Undoped SI-LEC. GaAs and Related Compounds, Biareitz, France.1984,:-T. Kikuta, et al., Microscopic Distribution of Deep and Shallow Levels Around Dislocation in Uadopted SI-GaAs, GaAs and Related Compounds, Biareitz, France, 1984,72-76. -
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