双栅极场发射阵列的特性模拟与设计

庄学曾; 夏善红; 陶新昕

双栅极场发射阵列的特性模拟与设计

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出版历程
- 收稿日期: 1997-01-15
- 修回日期: 1997-04-25
- 刊出日期: 1998-01-19

SIMULATION AND DESIGN OF DOUBLE-GATED FIELD EMISSION ARRAYS

摘要

摘要: 具有聚焦能力的双栅极场发射阵列(DGFEA)是两类最有发展前途的真空微电子器件(高分辨率场发射显示器和真空微电子微波、毫米波器件)的关键技术。本文简要比较了两种结构的DGFEA的主要性能和优缺点,叙述了双层栅极结构DGFEA的设计与模拟方法.从模拟计算获得的发射特性和聚焦性能可以看到:这种结构的DGFEA能获得几乎平行的场发射电子束,其最大发射电流密度可达到约500A/cm2以上,是发展真空微电子微波、毫米波器件和其它强流电子注器件等较理想的电子源。
- 真空微电子器件; 双栅极场发射阵列; 模拟计算; 微波器件; 毫米波器件
Abstract: One of the crucial technologies for developing high resolution field emitter displays and vacuum microelectronic devices in microwave and millimeter-wave bands is the design and fabrication of field emitter arrays which can provide with focused electron beam. After having a brief discussion of two kinds of double-gated field emission arrays (DGFEA), the concentric focusing (in plane gates) and the aperture focusing (2-tier gates), presented in the paper are the design and simulation methods of the aperture focusing DGFEA, and simulation results about its emission characteristics and focusing performance. It is believed from the results that the DGFEA can produce a pretty parallel electron beam, its maximum emission current density may exceed 300 A/cm2 and it meets the major requirements for developing microwave and millimeter-wave devices, and other strong beam devices.

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