氢还原铅硅酸盐玻璃表面层结构的研究
STUDY OF THE SURFACE STRUCTURE OF LEAD SILICATE GLASS REDUCED BY HYDROGEN
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摘要: 本文应用X光电子能谱仪(XPS)和俄歇电子能谱仪(AES)研究了经烧氢还原后铅硅酸盐玻璃(该玻璃就是微通道板次级电子发射层材料)中各元素浓度随深度的分布;还应用电子探针(EP)研究了体内元素分布,并讨论了不同烧氢还原温度所形成的发射层结构对微通道板电子倍增性能的影响;在此基础上作者提出了新的微通道板次级电子发射层结构。Abstract: The XPS, AES and EP have been used to study the elemental depth-distributions of secondary eletron emission layer of lead silicate glass reduced by hydrogen. The samples treated at different temperatures have differences in their micro-structures. The effects of different reduced temperature have been discussed, and new model of the layer of secondary electron emitter has been suggested
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Max Knoll,著,华东电子管厂技术情报室编译,电子器件的材料及制备, 1972年,第906页.[2][2][3]G. E. Hill, Advancesin Elctronics and Electronic Physics. 40A,(1976), pp. 153-165.[4][3][5]陶兆民,电子学通讯,1(1979)4,184-186.[6]汪金祥,特种坡璃,3(1987)2,13-20.[7]中科院电子听六室电子倍增器研制组,电子学通讯,1976年,第2期,第1-9页.[8]A.M.Tyutikov et al., The Soviet Journal of Glass Physics and[9]Chemistry, 7 (1980) 6, 705-711. -
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