低温ECL电路的瞬态特性分析
ANALYSIS OF TRANSIENT CHARACTERISTICS OF ECL CIRCUIT AT LOW TEMPERATURE
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摘要: 本文对ECL电路的瞬态特性进行了较详尽的分析,给出了适于全温区的较精确的电路延迟时间表达式,并对影响tpd的主要参数的温度特性进行了分析。该模型可用于各种温度下高速器件和电路的优化设计。
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关键词:
- ECL电路; 低温; 瞬态; 延迟时间
Abstract: Detailed analysis of transient characteristics of ECL circuits is performed in this paper, then a relatively exact propagation delay expression applied to all temperatures is presented. The cryogenic characteristics of some dominant parameters contributed to propagation delay are also discussed. The model achieved is suitable for optimum designs of high speed devices and circuits at all temperatures. -
Cressler J D, Tang D D, Jenkins K A, et al. IEEE Trans. on ED, 1989, 36(8): 1489-1502.[2]Cressler J D, Tang D D, Jenkins K A, et al. Low-Temperature Operation of Silicon Bipolar ECL Circuits. ISSCC Tech. Dig., New Fork: 1989, 228-229.[3]Stork J M C. Bipolar Transistor Scaling for Minimum Switching Delay and Energy Dissipation. IEDM Tech Dig., San Francisco: 1988, 550-553.[4]李垚, 沈克强,魏同立.固体电子学研究与进展,1995, 15(1):26-32.[5]李垚, 魏同立, 沈克强.东南大学学报, 1995, 20(3): 39-38.[6]Satake H,Hamasaki T. IEEE Trans. on ED, 1990, ED-37(7): 1688-1697. -
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