一种新颖的具有HEMT和GaAs MMIC的Ku波段低噪声放大器
A NOVEL Ku-BAND LOW NOISE AMPLIFIER WITH HEMT AND GaAs MMIC
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摘要: 本文介绍了一种具有高电子迁移率晶体管(HEMT)和砷化镓单片微波集成电路(GaAs MMIC)的Ku波段低噪声放大器。在11.7～12.2GHz频率范围内,该放大器的噪声系数小于1.9dB,相关增益大于27dB,输入和输出驻波比小于1.4。放大器第一级采用了HEMT和微波串联电感反馈技术,放大器未级采用了Ku波段GsAs MMIC。设计的关键是采用微波串联电感反馈方法同时获得最佳噪声和最小输入驻波匹配。放大器的输入端和输出端均为BJ-120波导。Abstract: A novel Ku-band low noise amplifier with high electron mobility transis-ror (HEMT) and GaAs monolithic microwave integrated circuit (MMIC) has been demonstrated. Its noise figure is less than 1.9dB with an associated gain over 27dB and an input-output VSWR less than 1.4 in the frequency range of 11.7-12.2 GHz. The HEMT and the microwave series inductance feedback technique arc used in the first stage of the amplifier, and the Ku-band MMIC is used in the last stage. The key to this design is to achieve a simultaneous optimum noise match and a minimum input VSWR match by using the microwave series inductance feedback method. The BJ-120 waveguides are used in both input and output of the amplifier.
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戴永胜等,固体电子学研究与进展,7(1987)2,150-156.[2]H. Rothe, W. Dahlke. Proc. IRE, 44(1956) 6, 811-818.[3]S. Lversen Proc. IEEE. 64(1975) 3. 540-542.[4]Sander Weinmb, IEEE Trans. on MTT, MTT-30 (1982)6. 849-853.[5]戴永胜,固体电子学研究与进展,7(1987)1,84-85.[6]戴永胜,固体电子学研究与进展,10(1990)4,406-407. -
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