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记忆效应非线性功放扩展Volterra模型分析与构建

南敬昌 刘元安 李新春 高锦春

南敬昌, 刘元安, 李新春, 高锦春. 记忆效应非线性功放扩展Volterra模型分析与构建[J]. 电子与信息学报, 2008, 30(8): 2021-2024. doi: 10.3724/SP.J.1146.2007.00121
引用本文: 南敬昌, 刘元安, 李新春, 高锦春. 记忆效应非线性功放扩展Volterra模型分析与构建[J]. 电子与信息学报, 2008, 30(8): 2021-2024. doi: 10.3724/SP.J.1146.2007.00121
Nan Jing-chang, Liu Yuan-an, Li Xin-chun, Gao Jin-chun. Analysis and Modeling on Expanding Volterra-Series Behavior Model for Nonlinear Power Amplifier with Memory Effects[J]. Journal of Electronics & Information Technology, 2008, 30(8): 2021-2024. doi: 10.3724/SP.J.1146.2007.00121
Citation: Nan Jing-chang, Liu Yuan-an, Li Xin-chun, Gao Jin-chun. Analysis and Modeling on Expanding Volterra-Series Behavior Model for Nonlinear Power Amplifier with Memory Effects[J]. Journal of Electronics & Information Technology, 2008, 30(8): 2021-2024. doi: 10.3724/SP.J.1146.2007.00121

记忆效应非线性功放扩展Volterra模型分析与构建

doi: 10.3724/SP.J.1146.2007.00121
基金项目: 

高等学校博士学科点专项科研基金(20030013010)和国家自然科学基金(50677004)资金资助

Analysis and Modeling on Expanding Volterra-Series Behavior Model for Nonlinear Power Amplifier with Memory Effects

  • 摘要: 通用Volterra级数行为模型由于较高计算复杂性使它受限用于弱非线性放大器。为了减少Volterra级数计算复杂性和级数核系数的数量,本文提出了两种方案:基于正交多项式函数Chebyshev和基于正交多项式函数Laguerre的Volterra级数,推导了Volterra-Chebyshev和Volterra-Laguerre的行为模型数学表达式,并对Volterra- Laguerre模型进行了仿真。数学理论分析和仿真结果表明,与普通Volterra级数模型相比,Volterra-Chebyshev和Volterra-Laguerre行为模型具有简化的结构和减少的系数。
  • Hyunchul Ku and Kenney J S. Behavioral modeling ofnonlinear RF power amplifiers considering memory effects[J].IEEE Trans. on Microwave Theory and Techniques.2003,51(12):2495-2503[2]Silveira D, Gadringer M, and Arthaberl H. RF-poweramplifier characteristics determination using parallel cascadeWiener models and pseudo-inverse techniques [A].Asia-Pacific Microwave Conference [C]. Suzhou (China).APMC2005 Proceeding, 2005, Vol 2: 1-4.[3]Isaksson M, Wisell D, and Ronnow D. A comparativeanalysis of behavioral models for RF power amplifiers[J].IEEE Trans. on Microwave Theory and Techniques.2006,54(1):348-359[4]Zhu Anding, Wren M, and Brazil T J. An efficientVolterra-based behavioral model for wideband RF poweramplifiers[C]. Microwave symposium digest, 2003IEEEMTT-S, 2003, Vol 2: 787-790.[5]Zhu Anding and Brazil T J. Behavioral modeling of RF poweramplifiers based on pruned volterra series[J].IEEEMicrowave and Wireless Components Letters.2004, 14(12):563-565[6]Singerl P and Kubin G. Chebyshev approximation ofbaseband Volterra series for wideband RF poweramplifiers[C]. IEEE International Symposium on Circuit andSystem, ISCAS 2005, Japan, 2005, Vol.3: 2655-2658.[7]Zhu Anding and Brazil T J. RF power amplifier behavioralmodeling using Volterra expansion with Laguerrefunctions[C]. Microwave symposium digest, 2005IEEEMTT-S International, 2005, 4: 963-966.[8]Murali, Tbmmla M T. Donovan Bruce E, and Watkans R N.Volterra series based modeling and compensation ofnonlinearities in high power amplifiers[C]. 1997 ICASSP,Munich, GERMANY, 1997, Vol 3: 2417-2420.[9]Isaksson M, Wisell D, and Ronnow D. A comparativeanalysis of behavioral models for RF power amplifiers[J].IEEE Trans. on Microwave Theory and Techniques.2006,54(1):348-359[10]Freescale simeconductor, Inc. freescale device data-wirelessRF product. 2005, 1: p495-499.
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出版历程
  • 收稿日期:  2007-01-19
  • 修回日期:  2008-01-30
  • 刊出日期:  2008-08-19

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