硅基片上螺旋电感宽带物理模型
doi: 10.3724/SP.J.1146.2005.01396
Wide-Band Physical Model for Spiral Inductors on Silicon Substrate
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摘要: 针对高损耗硅衬底，基于部分元等效电路方法和麦克斯韦电磁场理论，计入了趋肤效应、邻近效应和衬底涡流损耗对螺旋电感串联电感Ls与串联电阻Rs频率特性的制约，并通过n等效电路结构模拟了寄生电容的分布特性，从而建立了一种新的片上螺旋电感物理模型。通过与全波分析方法对比，验证了在20GHz范围内由该模型导出的等效电感Leff，等效电阻Reff和Q值误差均在7%以内。该模型可望用于硅基射频集成电路中螺旋电感进一步的理论探讨和优化设计。Abstract: For monolithic RF spiral inductor on high-loss silicon substrate, a novel physical model is proposed, in which functions of skin effect, proximity effect and eddy current loss in the substrate to frequency-dependent series parameters Ls and Rs are accounted in the light of modified partial equivalent element circuit methodology and Maxwells electromagnetic theory, and in the meanwhile, the distributed characteristics of parasitic capacitances are captured by n equivalent-circuit. Up to 20GHz, the model reveals quite good accuracy within 7% with data from full-wave electromagnetic filed simulator, including equivalent inductor Leff , resistor Reff and quality factor Q and, hopefully, it can be applied to further theory research and optimum design of RFIC spiral inductor on Si.
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