硅基片上螺旋电感宽带物理模型
doi: 10.3724/SP.J.1146.2005.01396
Wide-Band Physical Model for Spiral Inductors on Silicon Substrate
-
摘要: 针对高损耗硅衬底，基于部分元等效电路方法和麦克斯韦电磁场理论，计入了趋肤效应、邻近效应和衬底涡流损耗对螺旋电感串联电感Ls与串联电阻Rs频率特性的制约，并通过n等效电路结构模拟了寄生电容的分布特性，从而建立了一种新的片上螺旋电感物理模型。通过与全波分析方法对比，验证了在20GHz范围内由该模型导出的等效电感Leff，等效电阻Reff和Q值误差均在7%以内。该模型可望用于硅基射频集成电路中螺旋电感进一步的理论探讨和优化设计。Abstract: For monolithic RF spiral inductor on high-loss silicon substrate, a novel physical model is proposed, in which functions of skin effect, proximity effect and eddy current loss in the substrate to frequency-dependent series parameters Ls and Rs are accounted in the light of modified partial equivalent element circuit methodology and Maxwells electromagnetic theory, and in the meanwhile, the distributed characteristics of parasitic capacitances are captured by n equivalent-circuit. Up to 20GHz, the model reveals quite good accuracy within 7% with data from full-wave electromagnetic filed simulator, including equivalent inductor Leff , resistor Reff and quality factor Q and, hopefully, it can be applied to further theory research and optimum design of RFIC spiral inductor on Si.
-
Burghartz J N and Rejaei B. On the design of RF spiral inductors on silicon[J].IEEE Trans. on Electron Devices.2003, 50(3):718-729[2]Yue C P and Wong S S. Physical modeling of spiral inductors on silicon[J].IEEE Trans. on Electron Devices.2000, 47(3):560-568[3]李富华, 赵吉祥, 李征帆. 基于PEEC方法的片内螺旋电感建模. 半导体学报, 2005, 26(4): 770-774. Li Fu-hua, Zhao Ji-xiang, and Li Zheng-fan. Modeling for spiral inductors on-chip with partial element equivalent circuit method. Chinese Journal of Semiconductors, 2005, 26(4): 770-774.[4]Greenhouse H M. Design of planar rectangular microelectronic inductors. IEEE Trans. on Parts, Hybrids, Packaging, 1974, PHP-10 (2): 101-109.[5]Cao Yu and Groves R A, et al.. Frequency-independent equivalent-circuit model for on-chip spiral inductors[J].IEEE J. Solid-State Circuits.2003, 38(3):419-426[6]Tong K T and Tsui C. A physical analytical model of multilayer on-chip inductors[J].IEEE Trans. on Microwave Theory Tech.2005, 53(4):1143-1149[7]Arcioni P and Castello R, et al.. An innovative modelization of loss mechanism in silicon integrated inductors[J].IEEE Trans. on Circuits and Systems .1999, 46(12):1453-1460 -
计量
- 文章访问数: 3315
- HTML全文浏览量: 97
- PDF下载量: 1049
- 被引次数: 0
下载:
