中波红外超晶格探测技术研究现状及展望

刘铭; 赵雅琪; 关晓宁; 张凡; 芦鹏飞

doi:10.11999/JEIT260083

中波红外超晶格探测技术研究现状及展望

doi: 10.11999/JEIT260083 cstr: 32379.14.JEIT260083

刘铭^{1, 2},
赵雅琪¹,
关晓宁¹,
张凡^{1, 3},
芦鹏飞^1, ,

1.
①(北京邮电大学集成电路学院北京 100876
2.
中国电子科技集团公司第十一研究所北京 100015
3.
宁波威远光电研究院有限公司宁波 315200

基金项目: 红外探测全国重点实验室开放课题(IRDT-25-01)

详细信息

作者简介:
刘铭：男，博士研究生，研究员，研究方向为光电探测

赵雅琪：女，博士研究生，研究方向为二类超晶格红外探测器

关晓宁：女，副研究员，研究方向为红外光电材料与器件设计

张凡：男，博士研究生，研究方向为锑化物半导体红外光电芯片

芦鹏飞：男，教授，研究方向为光电材料与芯片

通讯作者:
芦鹏飞　lupengfei@bupt.edu.cn

中图分类号: TN215
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出版历程
- 修回日期: 2026-04-09
- 录用日期: 2026-04-09
- 网络出版日期: 2026-05-03

Research Status and Prospects of Mid-Wave Infrared Superlattice Detection Technology

LIU Ming^{1, 2},
ZHAO Yaqi¹,
GUAN Xiaoning¹,
ZHANG Fan^{1, 3},
LU Pengfei^{1
, ,}

1.
School of Integrated Circuits, Beijing University of Posts and Telecommunications, Beijing 100876, China
2.
The 11th Research Institute of China Electronics Technology Group Corporation, Beijing 100015, China
3.
Ningbo Weiyuan Optoelectronic Research Institute Co., Ltd., Ningbo 315200, China

Funds: National Key Laboratory of Infrared Detection Technologies (IRDT-25-01)

摘要

摘要: 中波红外探测器具备高灵敏度和优异的温度分辨能力，在国土安全、工业测温、医疗诊断以及遥感监测等民用与军用领域均扮演着至关重要的角色。二类超晶格(T2SL)材料因其能带可调和低俄歇复合率等优势，成为最具潜力的第三代红外探测器材料体系。该文首先阐述量子效率、暗电流密度与比探测率等关键光电参数对探测器性能的影响；随后，聚焦于InAs/GaSb和InAs/InAsSb两大材料体系，系统综述了在暗电流抑制与光响应提升两方面的最新进展，包括势垒结构设计、外延生长优化及器件工艺改进等关键技术，通过这些关键技术研发，探测器性能和工作温度不断提升；最后，对比分析了两类探测器的主要性能指标，并展望了中波超晶格探测技术未来的发展将集中于结构创新设计、大尺寸高质量材料生长、大规模焦平面集成等方面，并有望通过多机制耦合进一步拓展探测性能与应用边界。
- 二类超晶格 /
- 中波红外 /
- InAs/GaSb /
- InAs/InAsSb
Abstract: Significance Mid-wave infrared (MWIR) detectors are crucial for both civilian and military applications due to their high sensitivity and superior temperature discrimination. Type-II superlattice (T2SL), particularly InAs/GaSb and InAs/InAsSb material systems, have emerged as the most promising candidates for third-generation infrared photodetectors. This review systematically analyzes the current research status and future trends of MWIR T2SL detection technology, focusing on key performance parameters such as quantum efficiency, dark current density, and specific detectivity. The work aims to provide a comprehensive reference for material selection and performance optimization in this rapidly advancing field. Progress Significant progress has been achieved in suppressing dark current and enhancing photoresponse for MWIR T2SL detectors. In terms of dark current suppression, advanced barrier structures like nBn, XBn, and M-structures, designed via bandgap engineering, effectively block majority carrier transport while allowing efficient collection of photogenerated carriers. For instance, an nBn device utilizing an AlAsSb/InAsSb superlattice barrier demonstrated a dark current density of 2.01×10^-5 A/cm² at 150 K (Fig. 1a, b). Strain compensation techniques and optimized growth have further reduced bulk dark currents, with one device achieving 4.5×10^-7 A/cm² at 140 K (Fig. 2c, d). Device fabrication process optimization, including two-step etching and planar junction formation via Zn diffusion, have successfully minimized surface leakage currents (Fig. 3). For photoresponse enhancement, strategies include integrating micro-optical structures and optimizing epitaxial growth and device fabrication process optimization. The integration of metalenses has boosted peak responsivity to 9.01 A/W at 300 K (Fig. 4a). Guided-mode resonance architectures have enabled room-temperature external quantum efficiency of ～60% (Fig. 4b, c). Epitaxial optimizations, such as stepped absorbers and interfacial graded doping, have led to quantum efficiencies up to 59.4% at 150 K (Fig. 5c, d). Device fabrication process optimization like substrate removal and anti-reflection coating deposition have significantly improved quantum efficiency, with an average of 63.7% reported in the 3.7–4.8 μm range (Fig.6c,d). A comparative analysis shows that InAs/GaSb detectors primarily operate near 77 K, while InAs/InAsSb detectors demonstrate superior performance at higher temperatures, around 150 K (Fig. 7, Fig. 8). Overall, dark current densities are typically suppressed below 10^-4 A/cm², with peak quantum efficiencies approaching 80%. Conclusions T2SL materials, with their tunable band structure and low Auger recombination rates, are established as the core choice for high-performance MWIR detection. Current research has successfully addressed key challenges, dark current densities have been suppressed to the 10^–6 A/cm² level at ～150 K through innovative barrier designs and device fabrication process optimization, while quantum efficiencies have been enhanced to ～60% and beyond through optical and epitaxial engineering. The InAs/InAsSb material shows particular promise for high-operating-temperature applications. Prospects Future development will focus on several key directions: 1) Pushing the high-operating-temperature (HOT) limit further to maintain diffusion-limited performance at 180 K and above; 2) Advancing large-format focal plane array fabrication based on highly uniform material growth via mature molecular beam epitaxy to achieve >99% pixel operability; 3) Expanding into multi-color/multi-spectral detection capabilities by precisely tuning superlattice periods to enable integrated dual-band or multiband MWIR detection with reduced cross-talk; 4) Exploring novel device architectures and coupling multiple physical mechanisms to extend performance boundaries and application scopes.
- Type-II Superlattice /
- Mid-Wave Infrared (MWIR) /
- InAs/GaSb /
- InAs/InAsSb

HTML全文

图 1 美国喷气推进实验室nBn结构探测器测试结果^[15]

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图 2 中国科学院半导体物理所nBn结构探测器测试结果^[16]

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图 3 韩国i3system nBn结构探测器测试结果^[17]

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图 4 北京信息科技大学AlAsSb势垒探测器测试结果^[18]

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图 5 瑞典IRnova公司中波红外探测器研究结果^[19]

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图 6 美国西北大学中波红外探测器测试结果^[20]

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图 7 中国科学院物理研究所单片集成超透镜探测器研究结果^[21]

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图 8 美国德克萨斯大学nBn探测器测试结果^[22]

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图 9 电子科技大学阶梯型吸收层nBn结构探测器测试结果^[23]

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图 10 中国科学院半导体研究所界面梯度掺杂pBn结构探测器测试结果^[24]

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图 11 通过界面工程增强T2SL电子-空穴波函数交叠的能带结构示意图^[25]

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图 12 InAs/InAsSb与InGaAs/InAsSb超晶格材料吸收系数对比曲线^[26]

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图 13 韩国i3system公司中波红外nBn探测器研究结果^[27]

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图 14 中国科学院半导体研究所室温中波探测器测试结果^[28]

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图 15 InAs/GaSb体系和InAs/InAsSb体系中波红外探测器的暗电流密度对比

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图 16 InAs/GaSb体系和InAs/InAsSb体系中波红外探测器的量子效率对比

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图 17 中波T2SL红外探测器性能优化路径

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表 1 InAs/GaSb体系中波红外探测器性能参数对比

文献号	温度(K)	截止波长 (μm)	器件结构	暗电流密度 (A/cm²)	量子效率(%)	比探测率 (cm·Hz^1/2/W)
[16]	150	4.8	nBn	2.01×10^–5	58.8	6.47×10¹¹
[15]	150	6.0	nBn	4.50×10^–5	52.0	3.00×10¹¹
[18]	77	5.5	nBn	5.30×10^–6	/	8.35×10¹¹
[20]	150	4.5	/	6.40×10^–5	49.0	2.00×10¹¹
[22]	296	5.0	nBn	1.00×10^–1	60.0	1.20×10¹⁰
[24]	150	5.0	pBn	2.95×10^–5	59.4	1.24×10¹²
[34]	150	5.5	pin	3.30×10^–4	55.0	1.20×10¹¹
[35]	150	5.0	p⁺-B-n	1.20×10^–4	29.0	1.20×10¹¹
[38]	150	6.0	XBn	3.50×10^–5	50.0	/
[39]	150	6.0	CBIRD	1.14×10^–5	50.0	/
[41]	300	3.5	pin	5.02×10^–1	28.0	3.43×10⁹
[43]	77	5.2	pin	6.13×10^–4	34.6	/
[44]	150	5.4	BIRD	3.00×10^–5	52.0	2.53×10¹¹
[47]	77	4.5	pBn	1.84×10^–5	63.7	8.65×10¹¹
[47]	160	4.8	pBn	7.31×10^–5	59.8	4.96×10¹¹

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表 2 InAs/InAsSb体系中波红外探测器性能参数对比

文献号	温度(K)	截止波长(μm)	器件结构	暗电流密度 (A/cm²)	量子效率(%)	比探测率 (cm·Hz^1/2/W)
[17]	120	5.2	nBn	2.00×10^–5	/	/
[19]	100	5.0	n-on-p	8.80×10^–5	/	/
[21]	300	5.0	BIRD	10.90	/	3.00×10⁹
[23]	150	6.0	nBn	3.90×10^–5	46.0	4.51×10¹⁰
[28]	300	7.5	pπMn	3.40×10^–1	36.0	2.80×10⁹
[29]	77	5.7	PπMn	8.67×10^–5	42.5	3.90×10¹⁰
[30]	120	5.2	p-i-n	6.00×10^–5	40.0	/
[31]	77	5.2	p-i-n	8.30×10^–5	/	/
[32]	120	5.1	pπMn	1.00×10^–6	53.0	/
[40]	77	5.1	NMπP	5.00×10^–5	38.0	1.00×10¹²
[42]	150	6.0	/	6.50×10^–6	67.0	/

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