小型化宽阻带折叠基片集成波导滤波器研究

柯榕杰; 王洪斌; 程钰间

doi:10.11999/JEIT250869

小型化宽阻带折叠基片集成波导滤波器研究

doi: 10.11999/JEIT250869 cstr: 32379.14.JEIT250869

电子科技大学成都 611731

基金项目: 超宽带低成本一体化集成接收射频前端关键技术研究，四川省自然科学基金青年项目，项目编号：2025ZNSFSC1437

详细信息

作者简介:
柯榕杰：男，硕士生，研究方向为小型化宽阻带SIW滤波器

王洪斌：男，博士，副研究员，主要研究方向为多频/宽带/可重构超表面、多频反射/传输阵、多频共口径相控阵、超宽带收发射频前端电路集成等

程钰间：男，博士，教授，主要研究方向为毫米波/太赫兹平面集成天线阵、超宽带/多频共口径相控阵天线、微波/毫米波三维集成与微系统、微波/毫米波相控阵列与测试、多功能一体化电路与前端、天线复杂辐射特性精准调控等

通讯作者:
王洪斌　wanghongbin@uestc.edu.cn

中图分类号: TN713
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出版历程
- 修回日期: 2025-12-29
- 录用日期: 2025-12-29
- 网络出版日期: 2026-01-05

Research on A Miniaturized Wide Stopband Folded Substrate Integrated Waveguide Filter

University of Electronic Science and Technology of China, Chengdu 611731, China

摘要

摘要: 为满足5G/6G通信系统对小型化、高集成以及宽阻带的需求，该文提出一种基于高温共烧陶瓷(HTCC)技术的八分之一模折叠基片集成波导(FSIW)四阶带通滤波器。该滤波器融合折叠SIW的小型化优势与 HTCC的三维集成特性，通过八分之一模FSIW腔体结构实现尺寸缩减，滤波器尺寸仅为0.29λg×0.29λg，其中λg为其中心工作频率(f₀)下对应的波导波长。采用金属通孔抑制高次模耦合，加载弯折微带线引入传输零点，增加L型枝节优化高频响应，在上阻带形成3个可控的传输零点，实现20 dB@3.73f₀的宽阻带特性。实测结果显示，该滤波器中心频率为6.4 GHz，虽存在一定频偏与插入损耗，但相较现有研究，在小型化、阻带宽度及传输零点数量上均具明显优势，有望应用于高密度集成通信系统中。
- 带通滤波器 /
- 折叠基片集成波导 /
- 小型化 /
- 宽阻带 /
- HTCC
Abstract: To meet the requirements of 5G/6G communication systems for miniaturization, high integration, and wide stopband, a fourth-order bandpass filter based on the eighth-mode folded substrate integrated waveguide (FSIW) is proposed in this paper using high-temperature co-fired ceramic (HTCC) technology. The miniaturization advantages of folded SIW are combined with the three-dimensional integration characteristics of HTCC in this filter. Size reduction is achieved through the eighth-mode FSIW cavity structure, with a size of 0.29λg × 0.29λg, where λg is the waveguide wavelength corresponding to its center operating frequency (f₀). High-order mode coupling is suppressed using metal vias, transmission zeros are introduced by loading a bent microstrip line, and the high-frequency response is optimized through the addition of an L-shaped stub. As a result, three controllable transmission zeros are formed in the upper stopband, with a wide stopband characteristic of 20 dB@3.73f₀ achieved. The measured results show that the filter has a center frequency of 6.4 GHz. Although it exhibits a certain amount of frequency deviation and insertion loss, compared with existing research, it demonstrates distinct advantages in terms of miniaturization, stopband width, and the number of transmission zeros, holding promising potential for applications in high-density integrated communication systems. Objective With the rapid advancement of 5G/6G communication systems, there is an urgent demand for radio frequency (RF) microwave devices that combine miniaturization, high integration, and wide stopband performance. As a core component of RF transceiver front-ends, bandpass filters play a critical role in transmitting useful signals and suppressing interference. Traditional substrate integrated waveguide (SIW) filters suffer from limitations such as large size, restricted stopband extension, and insufficient controllability of transmission zeros, which hinder their application in high-density integrated communication systems. To address these challenges, this paper proposes a miniaturized wide stopband fourth-order bandpass filter based on eighth-mode folded substrate integrated waveguide (FSIW) and high-temperature co-fired ceramic (HTCC) technology, which aims to achieve a balance between compact size and broad stopband. Methods The proposed filter integrates the miniaturization advantage of folded SIW with the three-dimensional integration capability of HTCC technology. First, an eighth-mode FSIW cavity structure is designed by modifying the quarter-mode FSIW cavity. The square patch is replaced with a triangular patch (i.e., eighth-mode cavity I), and slots are further etched in the triangular patch (i.e., eighth-mode cavity Ⅱ). Second, a fourth-order bandpass filter is constructed by symmetrically designing two triangular metal patches for each cavity type and stacking them vertically, with a common metal layer (fifth layer) featuring coupling windows to enable coupling between upper and lower cavities. To optimize performance, three key techniques are employed: metal vias to suppress high-order mode coupling, bent microstrip lines to introduce transmission zeros, and an L-shaped stub to improve high-frequency response. Finally, parameter scanning analysis is conducted on critical dimensions (d₂, s₄, s₆) to verify the controllability of transmission zeros, and the filter is fabricated using HTCC technology, employing the Al₂O₃ substrate with relative permittivity 9.8 and loss tangent 0.0002. Results and Discussions The measured results indicate that the proposed filter achieves a center frequency of 6.4 GHz. Although processing and assembly errors lead to slight frequency deviation and increased insertion loss, the filter exhibits outstanding performance compared to existing designs (Table 2). In terms of miniaturization, the filter achieves a size of 0.29λg×0.29λg, which is significantly smaller than most reported SIW filters. Regarding stopband performance, the upper stopband extends to 20dB@3.73f₀, which is superior to that of filters with comparable sizes. Three controllable transmission zeros are generated in the upper stopband, with parameter scanning verifying their flexibility (Fig.13). Conclusions A miniaturized wide stopband fourth-order bandpass filter based on eighth-mode FSIW is successfully designed in this paper. The key achievements are summarized as follows. For one thing, the eighth-mode FSIW cavity structure combined with HTCC technology delivers a compact size of 0.29λg×0.29λg, meeting the high integration demands of 5G/6G systems. For another, the integration of metal vias, bent microstrip lines, and L-shaped stubs realizes a wide stopband of 20 dB@3.73f₀ along with three controllable transmission zeros, which enhances interference suppression capability. Additionally, parameter adjustment allows for flexible tuning of transmission zero positions without influencing the passband, improving design flexibility for different interference conditions. Overall, these innovations collectively overcome the challenges of miniaturization, stopband performance, and design flexibility in SIW filters, offering a practical and competitive solution for the RF front-ends of next-generation high-density integrated communication systems.
- Bandpass filter /
- Folded substrate integrated waveguide /
- Miniaturization /
- Wide stopband /
- HTCC

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图 1 四分之一模FSIW腔体的展开图

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图 2 三种FSIW腔体的中间层

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图 3 三种FSIW腔体基模的电场分布

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图 4 初始四阶带通滤波器结构

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图 5 初始四阶带通滤波器第2层的电磁场分布

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图 6 初始四阶带通滤波器第5层的电磁场分布

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图 7 初始四阶带通滤波器的耦合矩阵综合和仿真结果

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图 8 初始四阶带通滤波器第1层物理结构及其对耦合矩阵元素M_S1的影响

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图 9 初始四阶带通滤波器第5层物理结构及其对耦合矩阵元素M₁₃的影响

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图 10 滤波器的设计过程

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图 11 滤波器设计过程中反射系数和传输系数的变化

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图 12 所提四阶带通滤波器结构

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图 13 不同参数对所提滤波器传输零点位置的影响

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图 14 所提滤波器的实物测试

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图 15 所提滤波器的误差分析

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表 1 四阶带通滤波器尺寸表(mm)

L₁	L₂	L₃	s₁	s₂
3.50	2.49	1.00	1.70	0.28
s₃	s₄	s₅	s₆	s₇
0.29	1.10	0.13	3.14	0.40
s₈	s₉	s₁₀	s₁₁	d₁
0.10	1.97	0.15	0.40	1.70
d₂	d₃	d₄	d₅	m₁
0.33	0.44	0.44	1.38	0.48
m₂	m₃	m₄	m₅	m₆
0.42	2.23	0.62	0.40	2.02

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表 2 现有SIW滤波器工作性能对比

文献	中心频率 (GHz)	插入损耗 (dB)	零点个数	阻带宽度	尺寸
[4]	8.00	0.90	1	23dB@1.96f₀	0.72λg × 0.45λg
[10]	10.03	1.79	2	20dB@3.06f₀	1.09λg × 0.56λg
[12]	10.11	1.22	2	20dB@2.90f₀	1.38λg × 0.8λg
[13]	10.01	1.52	1	23dB@1.67f₀	1.31λg × 1.15λg
[14]	10.71	1.57	2	20dB@1.57f₀	0.84λg²
[15]	9.00	2.80	1	27dB@4.02f₀	0.71λg × 0.71λg
[16]	10.00	1.80	2	20dB@2.09f₀	0.71λg × 0.53λg
[17]	9.86	0.98	1	20dB@1.47f₀	1.36λg × 0.68λg
[18]	10.00	1.98	2	30dB@2.00f₀	1.54λg × 1.29λg
[19]	4.52	1.97	3	20dB@2.82f₀	0.095λg²
本文	6.80	1.54	3	20dB@3.73f₀	0.29λg × 0.29λg

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参考文献(19)

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