基于隧穿磁阻磁强计的软物理不可克隆函数设计

李翔宇; 刘冬生; 汪鹏君; 李乐薇; 张跃军

doi:10.11999/JEIT230365

基于隧穿磁阻磁强计的软物理不可克隆函数设计

doi: 10.11999/JEIT230365

1.
华中科技大学集成电路学院武汉 710061
2.
温州大学电气与电子工程学院温州 325035
3.
宁波大学信息科学与工程学院宁波 315211

基金项目: 国家自然科学基金(62174121, 62234008, 62134002, 62001257)，宁波市公益基金(2021S066)

详细信息

作者简介:
李翔宇：男，博士后，研究方向为传感器读出电路设计及实现、安全芯片设计

刘冬生：男，教授，研究方向为信息安全技术

汪鹏君：男，教授，研究方向为集成电路设计、信息安全等技术及其相关理论

李乐薇：女，硕士生，研究方向为安全芯片理论和设计

张跃军：男，教授，研究方向为低功耗、高信息密度集成电路理论和设计

通讯作者:
汪鹏君　wangpengjun@wzu.edu.cn

中图分类号: TN601
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- 被引次数: 0
出版历程
- 收稿日期: 2023-05-04
- 修回日期: 2023-08-15
- 网络出版日期: 2023-08-17
- 刊出日期: 2023-09-27

Design of Soft Physical Unclonable Functions Based on Tunneling Magnetic ResistanceMagnetometers

1.
College of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 710061, China
2.
College of Electrical and Electronic Engineering, Wenzhou University, Wenzhou 325035, China
3.
Faculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, China

Funds: The National Natural Science Foundation of China (62174121, 62234008, 62134002, 62001257), Ningbo Public Welfare Fund (2021S066)

摘要

摘要: 隧穿磁阻(TMR)传感器相比于其他类型磁阻传感器功耗更低、灵敏度更高、可靠性更好，在军事和民用等领域有着广阔的应用前景。该文针对TMR传感器的微弱信号检测和安全防护等问题，提出一种高精度TMR传感器读取专用集成电路(ASIC)和提取传感器物理不可克隆函数(PUF)特性的设计方案。该方案通过设计前端低噪声仪表放大器和高精度模数转换器，并结合斩波技术和纹波抑制技术，实现高精度信号读取和模数转换；利用具备数字输出功能的TMR磁强计比较不同传感器零位偏差，采用多位随机平衡算法完成TMR磁强计的软PUF设计，可产生128 bit PUF响应。TMR传感器读取ASIC利用上海华虹0.35 μm CMOS工艺完成流片，并测试磁强计功能和TMR-PUF性能。实验结果表明，在5V电源电压下，TMR磁强计系统功耗约10 mW，噪底可达–140 dBV，3次谐波失真–107 dB；TMR-PUF的唯一性达到47.8%，稳定性为97.85%，与相关文献比较性能优异。
- 隧穿磁阻传感器 /
- 物理不可克隆函数 /
- 读取电路
Abstract: Tunneling Magnetic Resistance (TMR) sensors have lower power consumption, higher sensitivity, and better reliability than other types of magnetoresistive sensors and have broad application prospects in military and civilian fields. A design scheme for high-precision TMR sensor reading Application Specific Integrated Circuit (ASIC) and extracting the sensor’s Physical Unclonable Functions (PUF) characteristics is proposed in this paper, addressing issues such as weak signal detection and security protection of TMR sensors. A front-end low noise instrument amplifier and high-precision ADC are proposed, which is combined with chopping technology and ripple suppression technology to achieve high-precision signal reading and analog-to-digital conversion. The TMR magnetometer with digital output function is used to compare the zero position deviation of different sensors, and multi-bit random balance algorithm is used to complete the soft PUF design of TMR magnetometer, which can generate 128 bit PUF response. The readout ASIC for TMR sensor using the Shanghai Huahong of 0.35 μm CMOS process is completed, and magnetometer’s function and TMR-PUF performance are tested. The experimental results show that under 5V power supply voltage, the power consumption of the TMR magnetometer system is about 10 mW, the noise floor can reach –140 dBV and the third harmonic distortion is –107 dB; The uniqueness of TMR-PUF reaches 47.8%, and its stability is 97.85%, which shows excellent performance compared to relevant literature.
- Tunneling Magnetic Resistance (TMR) sensor /
- Physical Unclonable Functions(PUF) /
- Readout circuit

HTML全文

图 1 TMR传感器读取电路

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图 2 斩波仪表放大器

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图 3 斩波前后的噪声仿真

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图 4 3阶Sigma-Delta调制器电路

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图 5 TMR传感器测试

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图 6 TMR磁强计系统测试

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图 7 TMR磁强计瞬态测试结果

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图 8 TMR磁强计非线性测试

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图 9 TMR磁强计PSD测试

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图 10 TMR-PUF唯一性测试

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图 11 不同温度下TMR-PUF可靠性测试

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图 12 不同电源激励下TMR-PUF可靠性测试

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图 13 TMR-PUF均匀性测试

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表 1 TMR传感器参数和接口电路的设计指标

参数	数值
传感器灵敏度	75 mV/Oe(5 V供电)
传感器电阻值	2 kΩ
传感器非线性	<0.2% FS
传感器噪底	1nT/Hz√@1 Hz
读取电路电源电压	5 V
集成电路工艺	0.35 μm CMOS
闪烁噪声转角频率	<5 mHz
等效输入噪声(PSD)	<15 nV/√Hz@1 Hz
共模抑制比	120 dB
输入阻抗	20 MΩ
功耗	<10 mW

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算法1 随机平衡算法伪代码
(1) int bit[place]
(2) int lef[3]
(3) int r[3]
(4) double v[8]
(5) i=0
(6) do {lsum = v[(i+lef[0]) mod 8]+v[(i+lef[1]) mod 8]+v[(i + lef[2]) mod 8]
(7) rsum = v[(i + r[0]) mod 8]+v[(i + r[1]) mod 8]+v[(i + r[2]) mod 8]
(8) if lsum > rsum
(9) then bits[palce] = 1
(10) else bits[place] = 0
(11) place = place +1}
(12) while(i<8)
(13) return

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表 2 与其他传感器PUF的比较(%)

传感器类型	PUF响应机理	唯一性	可靠性
加速度传感器^[11]	利用MEMS工艺偏差产生响应	–	92.97
MEMS陀螺^[14]	利用陀螺仪敏感电容偏差产生响应	42.64	92.17
压电传感器^[15]	利用压电传感器阻抗偏差产生响应	–	96.07
TMR传感器	利用TMR磁强计零位偏差产生响应	47.8	97.85

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