通过主动加速恢复延长芯片寿命：机遇与挑战

郭鑫斐

doi:10.11999/JEIT230323

通过主动加速恢复延长芯片寿命：机遇与挑战

doi: 10.11999/JEIT230323

郭鑫斐^,

上海交通大学密西根学院上海 200240

基金项目: 国家自然科学基金(62201340)

详细信息

作者简介:
郭鑫斐：男，助理教授，研究方向为集成电路可靠性、电子设计自动化、低功耗人工智能芯片

通讯作者:
郭鑫斐　xinfei.guo@sjtu.edu.cn

中图分类号: TN406
计量
- 文章访问数: 863
- HTML全文浏览量: 624
- PDF下载量: 186
- 被引次数: 0
出版历程
- 收稿日期: 2023-04-26
- 修回日期: 2023-07-25
- 网络出版日期: 2023-08-04
- 刊出日期: 2023-09-27

Active Accelerated Recovery for Extended Chip Lifetime: Opportunities and Challenges

GUO Xinfei^,

University of Michigan – Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China

Funds: The National Natural Science Foundation of China (62201340)

摘要

摘要: 新型工艺下芯片集成度的提高和尺寸的缩小导致了器件内部电场和电流密度的不断增加，使得老化问题日趋严重，当前针对老化主要的防护思路依然是采取保护带和预留时序裕量的方式，但该方法会导致过度设计。近年来，多项研究工作从实验的角度证明了芯片的主要老化机制具有一定的可恢复性，恢复过程且可被加速，从而大幅降低设计初期的时序裕量，由此启发了主动加速恢复的设计思路。该文回顾了老化防护的已有设计方法和主动加速恢复的相关进展，分析了主动加速恢复的潜在优势，并讨论了从模型、电路设计以及系统设计等角度进行片上实现所面临的瓶颈问题和相应的解决方法，提出了以感知-主动加速恢复为核心的自适应老化防护设计概念。
- 主动加速恢复 /
- 可靠性 /
- 老化 /
- 温度偏置不稳定性 /
- 电迁移
Abstract: The higher level of integration and smaller feature size in advanced technology nodes have led to increased electrical field and current density, which worsen further the chip aging issues. Current design solutions against aging are still based on guardband or extra timing margins, which can lead to overdesign. In recent years, multiple research work have demonstrated with experiments that several dominating aging effects can be recovered, and this recovery can be further accelerated. The necessary timing margin can be significantly lowered, inspiring the active accelerated recovery design concept. In this paper, current design solutions against aging and the progress that has been made in active accelerated recovery are reviewed. Potential opportunities introduced by this new method have been identified. Based on aspects of modeling, circuit design and system design, design challenges and their potential solutions to enable on-chip implementations are investigated. A concept of adaptive system that is based on sensing and active accelerated recovery has been proposed.
- Active accelerated recovery /
- Reliability /
- Aging /
- Bias Temperature Instability (BTI) /
- Electromigration

HTML全文

图 1 芯片使用场景的多样化和使用率的增加对于寿命的要求

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图 2 集成电路老化现象以及其影响示意图(以反相器电路为例)

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图 3 BTI和EM老化机理示意图

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图 4 当前常见老化防护方法总结

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图 5 针对BTI老化和EM老化的主动加速恢复的定义以及与其他状态的对比

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图 6 实验测得的电迁移(EM)老化过程以及其在高温环境中的主动加速恢复过程

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图 7 不同老化防护设计思路对于全寿命周期时序余量开销的直观影响

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图 8 周期性主动加速恢复与被动恢复的对比概念图

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图 9 传统老化防护方法与主动加速恢复设计方法设计空间的区别

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图 10 供电网络电迁移分析流程(以V_dd为例，此处忽略V_SS)

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图 11 可用作主动加速恢复的负偏置电压发生器电路原理图(基于文献[16]进行了修改)

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图 12 支持供电网络逆向电流的门控电路及其性能评估(基于文献[39]进行了修改)

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图 13 主动加速恢复情形下的电路设计空间探索模型示意图

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图 14 感知-主动加速恢复自适应系统集成方案

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