惠普忆阻电路的线性叠加分析

丁芝侠; 黄莎莉; 李赛; 杨乐

doi:10.11999/JEIT220733

惠普忆阻电路的线性叠加分析

doi: 10.11999/JEIT220733

武汉工程大学电气信息学院武汉 430205

基金项目: 国家自然科学基金(62176189, 62106181)

详细信息

作者简介:
丁芝侠：女，博士，副教授，研究方向为分数阶神经网络动力学分析及应用、忆阻神经形态系统、深度学习与类脑智能

黄莎莉：女，硕士生，研究方向为忆阻电路设计、忆阻神经形态系统

李赛：男，博士，讲师，研究方向为机器学习理论、控制与优化理论、动态系统的故障诊断

杨乐：男，博士，讲师，研究方向为忆阻神经形态系统、深度学习与类脑智能、忆阻电路设计

通讯作者:
杨乐　leyangmail@163.com

中图分类号: TN601
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- HTML全文浏览量: 378
- PDF下载量: 96
- 被引次数: 0
出版历程
- 收稿日期: 2022-06-06
- 修回日期: 2022-09-02
- 录用日期: 2022-09-06
- 网络出版日期: 2022-09-09
- 刊出日期: 2023-07-10

Linear Superposition Analysis of HP Memristor Circuits

School of Electrical and Information Engineering, Wuhan Institute of Technology, Wuhan 430205, China

Funds: The National Natural Science Foundation of China (62176189, 62106181)

摘要

摘要: 基于惠普(HP)忆阻器的元件特性，该文分析了惠普忆阻器的数学关系式，惠普忆阻元件的内部状态变量与忆阻阻值之间存在增量线性关系，在外加电压下惠普忆阻器阻值的变化可叠加，得出了惠普忆阻电路具有线性叠加性的结论。通过PSpice电路仿真验证上述结论的有效性和正确性，为叠加定理在含惠普忆阻器及线性元件的线性电路中的使用提供了理论分析支撑。
- 惠普忆阻电路 /
- 惠普忆阻器 /
- 增量线性 /
- 叠加定理 /
- PSpice仿真
Abstract: Based on the component characteristics of Hewlett Packard(HP) memristor, the mathematical relationship formula of HP memristor is analyzed. There is an incremental linear relationship between the internal state variables of HP memristor components and the value of memristor. The change of the value of HP memristor can be superimposed under applied voltage, and the conclusion is drawn that HP memristor circuit has linear superposition. The validity and correctness of the above conclusions are verified by PSpice circuit simulation, which provides theoretical analysis support for the use of the superposition theorem in linear circuits containing HP memristors and linear components.
- Hewlett Packard(HP) memristor circuit /
- HP memristor /
- Incremental linear /
- Superposition theorem /
- PSpice simulation

HTML全文

图 1 HP忆阻器的物理结构图

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图 2 反向求和运算电路的仿真电路图

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图 3 输入为直流电压源时运放的输出

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图 4 外加直流电压下$ {R_{\text{M}}} $上的变化

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图 5 输入为方波信号源时运放的输出

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图 6 外加方波电压下$ {R_{\text{M}}} $上的变化

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图 7 输入为正弦波信号源时运放的输出

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图 8 外加正弦波电压下$ {R_{\text{M}}} $上的变化

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表 1 直流电压下忆阻电路的输出电压值(V)

时间(ms)	V_out1	V_out2	V_测量	V_计算
0	–0.505	–0.632	–1.136	–1.137
5	–0.516	–0.650	–1.166	–1.166
10	–0.529	–0.671	–1.199	–1.200
15	–0.543	–0.696	–1.239	–1.239
20	–0.560	–0.726	–1.285	–1.286
25	–0.579	–0.762	–1.340	–1.341
30	–0.601	–0.806	–1.406	–1.407
35	–0.627	–0.860	–1.486	–1.487
40	–0.657	–0.930	–1.587	–1.587
45	–0.694	–1.021	–1.715	–1.715
50	–0.739	–1.145	–1.884	–1.884

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表 2 方波电压下忆阻电路的输出电压值(V)

时间(ms)	V_out1	V_out2	V_测量	V_计算
0	0.495	0.618	1.114	1.113
10	–0.518	–0.654	–1.172	–1.172
20	–0.546	–0.701	–1.247	–1.247
30	–0.583	–0.769	–1.351	–1.352
40	–0.632	–0.873	–1.504	–1.505
50	–0.702	–1.042	–1.744	–1.744
60	0.631	0.871	1.503	1.502
70	0.581	0.768	1.350	1.349
80	0.545	0.700	1.246	1.245
90	0.517	0.653	1.170	1.170
100	0.496	0.618	1.115	1.114

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表 3 正弦波电压下忆阻电路的输出电压值(V)

时间(ms)	V_out1	V_out2	V_测量	V_计算
0	0	0	0	0
25	–0.305	–0.384	–0.688	–0.689
50	–0.552	–0.728	–1.280	–1.280
75	–0.703	–1.090	–1.793	–1.793
100	–0.632	–1.735	–2.366	–2.367
125	0	0	0	0
150	0.631	1.732	2.364	2.363
175	0.702	1.088	1.790	1.790
200	0.551	0.726	1.277	1.277
225	0.303	0.382	0.685	0.685
250	0	0	0	0

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