Chip and Its Key Technology for Monolithically Integrated Visible Light Communication and Sensing
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摘要: 通信感知一体化是6G关键技术之一。氮化镓量子阱二极管的发射光谱和光探测谱存在重叠区，量子阱二极管光探测器能够吸收具有相同量子阱结构的光发射器件发出的短波长光子，生成光电流。该文基于该物理现象，研制同质集成光发射光接收器件的氮化镓光电子芯片，由于单个量子阱二极管芯片器件自身发光干扰导致感知外界光信号弱，但是收发分离芯片又存在效率低、紧凑性弱、鲁棒性差等问题，将具有相同量子阱结构的量子阱二极管器件制备在同一块芯片上，分别作为发光和接收器件，构建自由空间逆向光通信系统，探索可见光通信感知一体化芯片及关键技术。Abstract: Integrated communication and sensing is an emerging technology towards 6G. Since there is a spectral emission-detection overlap of GaN QW(Quantum Well) diode, GaN-based photodiode can absorb short-wavelength light photons emitted from another light-emitting diode sharing identical QW structure to generate photocurrent, offering the coexistence of emission, sensing and communication functionalities. Based on this intriguing phenomenon and because single QW diode chip has a weak external light signal sensing due to its luminous interference and the transceiver separation chips have some problems, such as low efficiency, weak compactness and poor robustness, this paper monolithically integrate GaN-based transmitter and receiver into a single chip, wherein they share identical QW structure and are fabricated using the same process flow. Asymmetric optical links are thus established using monolithic GaN optoelectronic chip, opening a feasible route to develop integrated visible light communication and sensing technology.
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