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基于锆钛酸铅的低电压驱动MEMS电场传感器研究

雷虎成 夏善红 彭春荣 毋正伟 张洲威 刘俊 彭思敏 刘向明 高雅浩

雷虎成, 夏善红, 彭春荣, 毋正伟, 张洲威, 刘俊, 彭思敏, 刘向明, 高雅浩. 基于锆钛酸铅的低电压驱动MEMS电场传感器研究[J]. 电子与信息学报, 2023, 45(1): 150-157. doi: 10.11999/JEIT211144
引用本文: 雷虎成, 夏善红, 彭春荣, 毋正伟, 张洲威, 刘俊, 彭思敏, 刘向明, 高雅浩. 基于锆钛酸铅的低电压驱动MEMS电场传感器研究[J]. 电子与信息学报, 2023, 45(1): 150-157. doi: 10.11999/JEIT211144
LEI Hucheng, XIA Shanhong, PENG Chunrong, WU Zhengwei, ZHANG Zhouwei, LIU Jun, PENG Simin, LIU Xiangming, GAO Yahao. Research on MEMS Electric Field Sensor with Low Driving Voltage Based on Lead Zirconate Titanate[J]. Journal of Electronics & Information Technology, 2023, 45(1): 150-157. doi: 10.11999/JEIT211144
Citation: LEI Hucheng, XIA Shanhong, PENG Chunrong, WU Zhengwei, ZHANG Zhouwei, LIU Jun, PENG Simin, LIU Xiangming, GAO Yahao. Research on MEMS Electric Field Sensor with Low Driving Voltage Based on Lead Zirconate Titanate[J]. Journal of Electronics & Information Technology, 2023, 45(1): 150-157. doi: 10.11999/JEIT211144

基于锆钛酸铅的低电压驱动MEMS电场传感器研究

doi: 10.11999/JEIT211144
基金项目: 国家自然科学基金(62031025, 61971398, 41775024),中国科学院科研仪器设备研制项目(YJKYYQ20200026, GJJSTD20210004)
详细信息
    作者简介:

    雷虎成:男,博士生,研究方向为高灵敏度MEMS电场传感器

    夏善红:女,博士,研究员,研究方向为传感器与微系统技术

    彭春荣:男,博士,研究员,研究方向为MEMS电场传感器芯片及系统

    毋正伟:男,博士,副研究员,MEMS谐振式微传感器研制及其真空封装技术

    张洲威:男,博士生,研究方向为静电探测及成像

    刘俊:男,博士生,研究方向为MEMS电场传感器的真空封装技术

    彭思敏:女,博士生,研究方向为单芯片MEMS三维电场传感器

    刘向明:男,博士生,研究方向为高灵敏度的MEMS电场传感器

    高雅浩:男,博士生,研究方向为高灵敏度的MEMS电场传感器

    通讯作者:

    夏善红 shxia@mail.ie.ac.cn

  • 中图分类号: TN3; TP212

Research on MEMS Electric Field Sensor with Low Driving Voltage Based on Lead Zirconate Titanate

Funds: The National Natural Science Foundation of China (62031025, 61971398, 41775024), The Scientific Instrument Developing Project of the Chinese Academy of Sciences (YJKYYQ20200026, GJJSTD20210004)
  • 摘要: 该文提出一种基于锆钛酸铅(PZT)的低电压驱动微机电系统(MEMS)电场传感器。该传感器基于电荷感应原理,其敏感单元由固定电极和可动电极构成。固定电极与可动电极均为感应电极,同时两者又是屏蔽电极。在PZT压电材料的驱动下,可动电极产生垂直于敏感芯片基底的振动并且与固定电极形成交互屏蔽,当存在待测电场时,分别在可动电极和固定电极上产生相位差为180°的感应电流信号。该文进行了传感器的设计和有限元仿真,提出敏感微结构的加工工艺流程,突破了基于PZT压电材料的可动电极MEMS工艺兼容制备技术,完成了敏感芯片制备,对传感器进行了性能测试。该传感器具有工作电压低的突出优点。实验测试表明,在0~50 kV/m电场强度范围内,采用1 V交流驱动电压,电场传感器的灵敏度为0.292 mV/(kV/m),线性度为2.89%。
  • 图  1  传感器结构与原理示意图

    图  2  传感器的等效电路模型

    图  3  互屏蔽电极在可动电极静止状态下的电场分布图

    图  4  互屏蔽电极在可动电极运动状态下的电场分布图

    图  5  可动结构位移的仿真模型和仿真结果

    图  6  PZT溶胶的制备流程

    图  7  敏感芯片的加工工艺流程

    图  8  压电薄膜的XRD图

    图  9  电场敏感芯片的SEM照片

    图  10  电场传感器测试标定装置

    图  11  电场传感器的响应曲线

    表  1  仿真结构参数

    结构参数参数值结构参数参数值(μm)
    梁1的长度1900 μm可动电极的长度600
    梁1的宽度100 μm可动电极的宽度5
    梁1的厚度4 μm可动电极之间的间隙15
    梁2的长度650 μm可动电极的厚度4
    梁2的宽度60 μmPZT薄膜的长度650
    梁2的厚度4 μmPZT薄膜的宽度53
    可动电极的数量84×2PZT薄膜的厚度0.6
    下载: 导出CSV
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出版历程
  • 收稿日期:  2021-10-20
  • 修回日期:  2022-02-17
  • 录用日期:  2022-02-21
  • 网络出版日期:  2022-03-05
  • 刊出日期:  2023-01-17

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