毫米波雷达前端芯片关键技术探讨

刘兵; 李旭光; 傅海鹏; 马凯学

doi:10.11999/JEIT210076

毫米波雷达前端芯片关键技术探讨

doi: 10.11999/JEIT210076

天津大学微电子学院天津 300072

基金项目: 国家重点研发计划(2018YFB2202500)

详细信息

作者简介:
刘兵：男，1991年生，博士生，研究方向为射频、毫米波集成电路设计

李旭光：男，1990年生，博士生，研究方向为射频、毫米波集成电路设计

傅海鹏：男，1985年生，副教授，研究方向为射频、毫米波集成电路设计、太赫兹探测器、晶体管可靠性建模

马凯学：男，1973年生，教授，研究方向为射频、毫米波集成电路设计

通讯作者:
马凯学　makaixue@tju.edu.cn

中图分类号: TN958; TN43
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- 文章访问数: 2006
- HTML全文浏览量: 710
- PDF下载量: 304
- 被引次数: 0
出版历程
- 收稿日期: 2021-01-21
- 修回日期: 2021-04-14
- 网络出版日期: 2021-04-29
- 刊出日期: 2021-06-18

Discussion on the Key Technique of Millimeter-wave Radar Front-end

School of Microelectronics, Tianjin University, Tianjin 300072, China

Funds: The National Key R&D Program of China (2018YFB2202500)

摘要

摘要: 毫米波雷达的距离分辨率和最大可工作距离通常受雷达射频信号带宽和发射功率的限制，具有宽工作带宽、高输出功率、高灵敏度、高精度相位控制的毫米波雷达芯片是实现高性能毫米波雷达系统的关键。毫米波雷达芯片的设计难点主要集中在阻抗匹配、噪声降低、功率提升、相位控制等方面。因此，该文针对毫米波雷达前端芯片设计难点的关键解决技术进行探讨和综述。
- 毫米波雷达 /
- 芯片 /
- 阻抗匹配 /
- 功率合成 /
- 相控阵
Abstract: The range resolution and maximum working distance of millimeter-wave radar are usually limited by the RF bandwidth and transmitted power. Millimeter-wave radar front-end chip with wide bandwidth, high transmitted power, high sensitivity and high-precision phase control is crucial to millimeter-wave radar system to achieve high performance. The difficulties of millimeter-wave radar chips mainly focus on impedance matching, noise reduction, transmitted power increase, phase control, etc. Therefore, this article discusses and summarizes the key technique to solution the difficulties of millimeter-wave radar front-end chips.
- Millimeter-wave radar /
- Chip /
- Impedance matching /
- Power combination /
- Phased-array

HTML全文

图 1 全集成毫米波雷达芯片基本架构

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图 2 LC型宽带级间匹配网络

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图 3 基于变压器反馈技术的各种结构

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图 4 基于变压器的4阶耦合谐振腔

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图 5 3种功率放大器基本结构对比^[51]

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图 6 4种功率合成结构对比^[56]

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图 7 4种不同的相控阵结构(以接收机为例)

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图 8 3种不同的毫米波移相器结构

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表 1 宽带毫米波低噪声放大器性能对比

文献序号	[23]	[25]	[31]	[36]	[37]	[38]	[44]	[50]
工艺	40 nm CMOS	0.13 μm SiGe BiCMOS	0.13 μm SiGe BiCMOS	65 nm CMOS	65 nm CMOS	65 nm CMOS	28 nm CMOS	65 nm CMOS
匹配结构	L型	T型	耦合T型	CS跨导增强	极点调控	极点调控	耦合谐振腔	耦合谐振腔
频率(GHz)	101.5～142.1	70～140	22～47	54.4～90.0	62.5～92.5	24.9～32.5	68.1～96.4	24.0～32.5
增益(dB)	20.6	25	22.2	17.7	18.5	18.33	29.6	22.1
噪声系数(dB)	6.2	<9	3.0～4.3	5.4～7.4	5.5～7.9	3.25～4.20	6.4～8.2	<5
功耗(mW)	45	54	9.5	19	27	20.5	31.3	19.3
面积(mm²)	0.225	0.33	0.13	0.37	0.24	0.38	0.27	0.12

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表 2 宽带、高功率毫米波功率放大器性能对比

文献序号	[46]	[47]	[55]	[56]	[58]	[60]	[62]
工艺	0.13 μm SiGe BiCMOS	45 nm CMOS SOI	45 nm CMOS SOI	100 nm AlGaN/GaN	0.13 μm SiGe BiCMOS	45 nm CMOS SOI	40 nm CMOS
结构	变压器Doherty 合成	变压器谐波调谐网络	4重堆叠	Wilkinson 4路合成	1/4波长线 16路合成	零度合成器 24路合成	串并联变压器 2路合成
频率(GHz)	23.3～39.4	23～40.5	29	92	68～91	60	70.3～85.5
电源电压(V)	1.5	2	5	18	1.8	2.2	0.9
P_sat(dBm)	17	18.9	24.8	37.8	27.3	30.1	20.9
PAE_max(%)	22.6	43.2	29	18.3	12.4	20.8	22.3
增益(dB)	16.6～18.2	15.6～18.7	13	15.3	19.3	24.7	18.1
面积(mm²)	1.755	0.21	0.3	16.72	6.48	6.6	0.19

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表 3 毫米波移相器性能对比

文献序号	[64]	[65]	[67]	[68]	[69]	[70]	[72]	[73]
工艺	65 nm CMOS	65 nm CMOS	40 nm CMOS	0.13 μm SiGe BiCMOS	65 nm CMOS	65 nm CMOS	65 nm CMOS	40 nm CMOS
拓扑结构	开关切换	开关切换	有源无源混合型	反射型	反射型	无源矢量合成	有源矢量合成	有源矢量合成
频率(GHz)	57～64	27～42	52～57	62	29	32～40	21～30	90～98
相位精度	11.25°/5 bit	11.25°/5 bit	5.6°/6 bit	连续控制	连续控制	2.8°/12 bit	0.8°/13 bit	5.6°/9 bit
相位RMS误差(°)	4.4～9.5	3.8	3.76	–	–	0.45～1.6	0.28～0.88	1.82
增益(dB)	–16.3	–14.5	–19	–10.3	–8.5	–18	12.2	–
增益RMS误差(°)	0.5～1.1	2.1	2.23	–	–	0.17～0.38	0.16	1.12
功耗(mW)	0	0	14.3	0	0	0	12	–
面积(mm²)	0.094	0.395	0.15	0.16	0.076	0.14	0.052	–

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