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一种低开销的三点翻转自恢复锁存器设计

黄正峰 李先东 陈鹏 徐奇 宋钛 戚昊琛 欧阳一鸣 倪天明

黄正峰, 李先东, 陈鹏, 徐奇, 宋钛, 戚昊琛, 欧阳一鸣, 倪天明. 一种低开销的三点翻转自恢复锁存器设计[J]. 电子与信息学报, 2021, 43(9): 2508-2517. doi: 10.11999/JEIT200379
引用本文: 黄正峰, 李先东, 陈鹏, 徐奇, 宋钛, 戚昊琛, 欧阳一鸣, 倪天明. 一种低开销的三点翻转自恢复锁存器设计[J]. 电子与信息学报, 2021, 43(9): 2508-2517. doi: 10.11999/JEIT200379
Zhengfeng HUANG, Xiandong LI, Peng CHEN, Qi XU, Tai Song, Haochen QI, Yiming OUYANG, Tianming NI. A Low-Cost Triple-Node-Upset-Resilient Latch Design[J]. Journal of Electronics & Information Technology, 2021, 43(9): 2508-2517. doi: 10.11999/JEIT200379
Citation: Zhengfeng HUANG, Xiandong LI, Peng CHEN, Qi XU, Tai Song, Haochen QI, Yiming OUYANG, Tianming NI. A Low-Cost Triple-Node-Upset-Resilient Latch Design[J]. Journal of Electronics & Information Technology, 2021, 43(9): 2508-2517. doi: 10.11999/JEIT200379

一种低开销的三点翻转自恢复锁存器设计

doi: 10.11999/JEIT200379
基金项目: 国家自然科学基金(61874156, 61874157, 61904001, 61904047),安徽省自然科学基金(1908085QF272)
详细信息
    作者简介:

    黄正峰:男,1978年生,教授,硕士生导师,研究方向是数字系统设计自动化

    李先东:男,1996年生,硕士生,研究方向是集成电路软错误分析和系统可靠性设计

    陈鹏:男,1995年生,硕士生,研究方向是硬件安全

    徐奇:男,1991年生,讲师,研究方向是数字集成电路容错设计

    宋钛:男,1982年生,博士生,研究方向是数字集成电路测试

    戚昊琛:女,1981年生,高级实验师,研究方向是传感器与嵌入式系统

    欧阳一鸣:男,1963年生,教授,研究方向是数字系统设计自动化等

    倪天明:男,1991年出生,讲师,研究方向是三维集成电路容错设计

    通讯作者:

    倪天明 timmyni126@126.com

  • 中图分类号: TN43; TP302.8

A Low-Cost Triple-Node-Upset-Resilient Latch Design

Funds: The National Natural Science Foundation of China (61874156, 61874157, 61904001, 61904047), Anhui Province Natural Science Foundation (1908085QF272)
  • 摘要: 随着集成电路特征尺寸的不断缩减,在恶劣辐射环境下,纳米级CMOS集成电路中单粒子三点翻转的几率日益增高,严重影响可靠性。为了实现单粒子三点翻转自恢复,该文提出一种低开销的三点翻转自恢复锁存器(LC-TNURL)。该锁存器由7个C单元和7个钟控C单元组成,具有对称的环状交叉互锁结构。利用C单元的阻塞特性和交叉互锁连接方式,任意3个内部节点发生翻转后,瞬态脉冲在锁存器内部传播,经过C单元多级阻塞后会逐级消失,确保LC-TNURL锁存器能够自行恢复到正确逻辑状态。详细的HSPICE仿真表明,与其他三点翻转加固锁存器(TNU-Latch, LCTNUT, TNUTL, TNURL)相比,LC-TNURL锁存器的功耗平均降低了31.9%,延迟平均降低了87.8%,功耗延迟积平均降低了92.3%,面积开销平均增加了15.4%。相对于参考文献中提出的锁存器,LC-TNURL锁存器的PVT波动敏感性最低,具有较高的可靠性。
  • 图  1  现有的TNUs加固锁存器

    图  2  本文提出的LC-TNURL锁存器

    图  3  LC-TNURL故障注入

    图  6  不同电压下的功耗

    图  4  不同工艺角下的功耗

    图  5  不同工艺角下的延迟

    图  7  不同电压下的延迟

    图  8  不同温度下的功耗

    图  9  不同温度下的延迟

    表  1  各锁存器加固能力对比(%)

    锁存器名称DNUs容忍率DNUs自恢复率TNUs容忍率TNUs自恢复率
    TNU-Latch[8]1009110076
    LCTNUT[9]1004310014
    TNUTL[10]1003310017
    TNURL[11]100100100100
    本文结构100100100100
    下载: 导出CSV

    表  2  性能与开销对比

    锁存器名称功耗 (µW)延迟 (ps)面积 (USTs)功耗延迟积 (aJ)
    TNU-Latch[8]1.06106.36216112.74
    LCTNUT[9]0.705.021323.51
    TNUTL[10]0.5324.0510812.75
    TNURL[11]1.646.9938411.39
    本文结构0.623.562522.21
    下载: 导出CSV

    表  3  性能与开销的相对变化(%)

    锁存器名称Δ功耗Δ延迟Δ面积Δ功耗延迟积
    TNU-Latch[8]–41.5–96.716.7–98.0
    LCTNUT[9]–11.4–29.190.9–37.0
    TNUTL[10]17.0–85.2133.3–82.7
    TNURL[11]–62.2–49.1–34.4–80.6
    平均值–31.9–87.815.4–92.3
    下载: 导出CSV

    表  4  不同锁存器的PVT波动方差

    锁存器名称σ2(PP)σ2(PD)σ2(VP)σ2(VD)σ2(TP)σ2(TD)平均方差
    TNU-Latch[8]698.992336.630.7112073.400.011763.432812.20
    LCTNUT[9]1964.7573.310.54103.780.0095.35372.95
    TNUTL[10]28.94223.500.08479.020.0050.56130.35
    TNURL[11]11.0418.180.9528.110.0112.7911.85
    本文结构9.724.320.224.310.010.453.17
    下载: 导出CSV
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出版历程
  • 收稿日期:  2020-05-05
  • 修回日期:  2021-05-15
  • 网络出版日期:  2021-08-11
  • 刊出日期:  2021-09-16

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