The Role of Parasitic Elements in Fading Memory of A Charge Controlled Memristor
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摘要: 荷控忆阻器在寄生元件存在的情况下，可能发生记忆衰退现象。该文采用忆阻器动力学路线图和仿真的方法，研究了忆阻器寄生电阻和寄生电容对其动力学特性的影响。理论和仿真分析发现，理想荷控(流控)忆阻器在直流和交流激励下，寄生电阻或寄生电容单独存在时不发生记忆衰退现象，但在寄生电阻和寄生电容同时存在的情况下会发生记忆衰退，其机理是寄生元件形成放电通路，从而导致荷控忆阻器产生了记忆衰退。Abstract: In the presence of parasitic elements, fading memory may occur in charge controlled memristors. The effects of parasitic resistance and capacitance on the dynamic characteristics of memristor are studied by using the dynamic route map and simulation method. The oretical and simulation analysis shows that the ideal charge controlled (current controlled) memristor does not have fading memory when the parasitic resistance or capacitance exists alone under the excitation of DC and AC, but fading memory occurs when the parasitic resistance and capacitance exist at the same time. The mechanism is that the parasitic elements form discharge path, which leads to fading memory of the charge controlled memristor.
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Key words:
- Memristor /
- Fading memory /
- Parasitic effects
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