A Capacitor-less Low Dropout Regulator with Fast Response
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摘要: 为了改善负载跳变对低压差线性稳压器(LDO)的影响，该文提出一种用于无片外电容LDO(CL-LDO)的新型快速响应技术。通过增加一条额外的快速通路，实现CL-LDO的快速瞬态响应，并且能够减小LDO输出过冲和下冲的幅度。该文电路基于0.18 μm CMOS工艺设计实现，面积为0.00529 mm2。流片测试结果表明，当输入电压范围为1.5～2.5 V时，输出电压为1.194 V；当负载电流以 1 μs的上升时间和下降时间在 100 μA～10 mA之间变化时，CL-LDO的过冲恢复时间为489.537 ns，下冲恢复为960.918 ns；相比未采用该技术的传统CL-LDO，响应速度能够提高7.41倍，输出过冲和下冲的电压幅值能够分别下降35.3%和78.1%。Abstract: A novel technique for increasing the load response speed of Capacitor-Less Low-DropOut linear regulator (CL-LDO) is proposed to improve the transient response of CL-LDO when its load current changes. With an additional fast signal feedback path, the CL-LDO can achieve fast transient response so that the overshoot and undershoot of its output voltage can be dramatically reduced. A CL-LDO with fast response is realized in 0.18 μm CMOS and occupies an active area of 0.00529 mm2. The CL-LDO has an output voltage of 1.194 V when the input supply voltage ranges from 1.5 V to 2.5 V. When the load current changes from 100 μA to 10 mA with the rise and fall time of 1 μs, the output of LDO can be recovered from its overshoot and undershoot to a stable voltage within 489.537 ns and 960.918 ns, respectively. Compared with a traditional CL-LDO without this proposed technique, the transient response speed of this CL-LDO is increased by 7.41 times. The overshoot and undershoot of the output voltage is decreased by 35.3% and 78.1%, respectively.
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Key words:
- Low-DropOut (LDO) regulator /
- Capacitor-less /
- Fast transient response /
- Small area
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表 1 控制信号Ctrl1和Ctrl2的工作原理
IL Vfb Ctrl1 Ctrl2 M1 M2 升高 下冲/<0.70 V 低电平 低电平 导通 关断 降低 过冲/>0.90 V 高电平 高电平 关断 导通 稳定 稳定/=0.80 V 高电平 低电平 关断 关断 
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表 2 本文设计的CL-LDO与其它文献的CL-LDO性能比较
参数 文献[13]* 文献[14] 文献[15] 文献[16] 本文 W/O W 工艺 (nm) 180 65 180 130 180 Vin (V) 1.2 1.2 1.2～1.8 1～1.4 1.5～2.5 Vout (V) 1 1 0.8～1.6 0.8 1.2 IL (mA) 100 0.1～25 1-100 0.12～25 0.1～10 过冲/下冲 (mV) 220 225 200 284 597/946 386/207 环路增益 (dB) – – >59.8 75 85～87 85～87 负载调整率 (mV/mA) 0.023 0.042 0.081 0.173 0.97 0.96 线性调整率 (mV/V) 0.69 3.8 – 2.25 11.3 10.0 恢复时间 (μs) 3.6＊ 1.3† 0.22† 0.19# 3.624＊ 0.489＊ 电源抑制比 (dB) 49.6 52 – 57 50.2 面积 (mm2) 0.022 0.087 0.031 0.008 0.00529 *考虑寄生参数的电路后仿真数据；＊电流阶跃变化的上升时间和下降时间为1 μs；†电流阶跃变化的上升时间和下降时间约为300 ps；#电流阶跃变化的上升时间和下降时间约为100 ns。
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