低轴间耦合的MEMS三维电场传感器

凌必赟; 彭春荣; 任仁; 储昭志; 张洲威; 雷虎成; 夏善红

doi:10.11999/JEIT171188

低轴间耦合的MEMS三维电场传感器

doi: 10.11999/JEIT171188

凌必赟^{1, 2},
彭春荣¹,
任仁¹,
储昭志^{1, 2},
张洲威^{1, 2},
雷虎成^{1, 2},
夏善红^1, ,

1.
中国科学院电子学研究所传感器技术国家重点实验室北京 100190
2.
中国科学院大学北京 100049

基金项目: 国家自然科学基金(61327810)，国家863计划项目(2015AA042602)，中国科学院创新面上基金(CXJJ-17-M151)

详细信息

作者简介:
凌必赟：男，1990年生，博士生，研究方向为MEMS 3维电场传感器

彭春荣：男，1979年生，博士，副研究员，研究方向为MEMS电场传感器及系统

任仁：男，1982年生，博士，副研究员，研究方向为MEMS电场传感器标定和检测系统

储昭志：男，1990年生，博士生，研究方向为MEMS电场传感器及制备技术

张洲威：男，1993年生，博士生，研究方向为静电探测技术

雷虎成：男，1993年生，博士生，研究方向为高灵敏MEMS电场传感器

夏善红：女，1958年生，博士，研究员，研究方向为微纳传感器与微系统技术

通讯作者:
夏善红 shxia@mail.ie.ac.cn

中图分类号: TP212
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出版历程
- 收稿日期: 2017-12-18
- 修回日期: 2018-05-07
- 网络出版日期: 2018-06-12
- 刊出日期: 2018-08-01

MEMS-based Three-dimensional Electric Field Sensor with Low Cross-axis Coupling Interference

Biyun LING^{1, 2},
Chunrong PENG¹,
Ren REN¹,
Zhaozhi CHU^{1, 2},
Zhouwei ZHANG^{1, 2},
Hucheng LEI^{1, 2},
Shanhong XIA^{1
, ,}

1.
State Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, China
2.
University of Chinese Academy of Sciences, Beijing 100049, China

Funds: The National Natural Science Foundation of China (61327810), The National 863 Program of China (2015AA042602), Chinese Academy of Sciences Project (CXJJ-17-M151)

摘要

摘要: 轴间耦合干扰是影响3维电场传感器测量准确性的重要因素。该文提出了一种低耦合干扰的MEMS 1维电场敏感芯片，并将3个上述的芯片正交组合研制出一款低轴间耦合的MEMS 3维电场传感器。不同于已见报道的测量垂直方向电场分量的MEMS 1维电场敏感芯片，该文提出的芯片采用轴对称设计，在差分电路的配合下能够测量垂直于对称轴方向的面内电场分量，并能够消除正交于测量轴方向的电场分量的耦合干扰。该MEMS 3维电场传感器具尺寸小和集成度高等优点。实验结果表明在0～120 kV/m电场强度范围内，该MEMS 3维电场传感器的轴间耦合灵敏度小于3.48%，3维电场测量误差小于7.13%。
- MEMS /
- 3维 /
- 电场传感器 /
- 轴间耦合干扰
Abstract: Cross-axis coupling interference influences greatly the measurement accuracy of Three-Dimensional (3D) Electric Field Sensor (EFS). A MEMS-based One-Dimensional (1D) Electric Field Microsensor (EFM) chip with low coupling interference is presented, and a MEMS-based 3D EFS with low cross-axis coupling interference is developed by arranging three 1D EFM chips orthogonally. Different from previously reported 1D EFM chips sensitive to perpendicular electric field component, the proposed 1D EFM chip is designed to be symmetrical and connected to difference circuit, so that it is capable of sensing parallel electric field component perpendicular to axis of symmetry and eliminating coupling interference. The proposed 3D EFS has the advantages of small size and high integration. Experimental results reveal that in the range of 0～120 kV/m, the cross-axis sensitivities are within 3.48%, and the total measurement errors of this 3D EFS are within 7.13%.
- Micro-Electro-Mechanical System (MEMS) /
- Three-dimensional /
- Electric field sensor /
- Cross-axis coupling interference

HTML全文

图 1 1 维电场敏感芯片示意图

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图 2 1 维电场敏感芯片的仿真模型

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图 3 1 维电场敏感芯片对不同方向电场的仿真结果

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图 4 1 维电场敏感芯片的微加工工艺流程

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图 5 1 维电场敏感芯片扫描电镜照片

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图 6 MEMS 3 维电场传感器的实物图

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图 7 MEMS 3 维电场传感器测试标定装置

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图 8 MEMS 3维电场传感器的标定曲线

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表 1 1 维电场敏感芯片的关键参数

结构参数	参数值
感应电极宽度w_sn	8 µm
屏蔽电极宽度w_sh	10 µm
感应电极与屏蔽电极的间距(平衡位置)g	15 µm
相邻的两个感应电极的间距W	95 µm
感应电极长度L_sn	1030 µm
屏蔽电极长度L_sh	1045 µm
结构厚度 $\tau $	25 µm
衬底厚度h	300 µm
感应电极数量N_e	14×2
梳齿数量N_d	84×20
谐振结构质量m_eff	4.4×10^–5 g
等效弹性系数k_q	11.3 N/m

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表 2 X轴，Y轴和Z轴1维电场敏感芯片的灵敏度

电场方向	X轴1维电场敏感芯片的灵敏度 (mV·m/kV)	Y轴1维电场敏感芯片的灵敏度 (mV·m/kV)	Z轴1维电场敏感芯片的灵敏度 (mV·m/kV)
沿X轴	0.293	0.001	0.008
沿Y轴	0.011	0.316	0.007
沿Z轴	0.008	0	0.287

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表 3 3 维电场传感器在空间作不同角旋转的输出与计算电场

旋转角度	施加电场(kV/m)	X轴1维电场敏感芯片的输出(mV)	Y轴1维电场敏感芯片的输出(mV)	Z轴1维电场敏感芯片的输出(mV)	合成电场(kV/m)	误差(%)
$\theta $₁	50	0.01	8.67	12.08	49.77	0.46
$\theta $₁	100	0.01	17.51	24.35	100.40	0.40
$\theta $₂	50	0.01	13.97	6.86	49.84	0.32
$\theta $₂	100	0.04	27.74	13.99	99.56	0.44
$\theta $₃	50	0.03	–10.08	–11.63	51.08	2.16
$\theta $₃	100	0.05	–20.50	–22.84	101.67	1.67
$\theta $₄	50	2.56	–13.02	8.57	52.21	4.42
$\theta $₄	100	5.22	–26.73	15.99	104.02	4.02
$\theta $₅	50	–8.67	9.77	8.49	53.30	6.60
$\theta $₅	100	–16.94	19.32	17.84	107.13	7.13

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