重掺杂发射区中禁带宽度和少子复合寿命的确定方法
A NEW METHOD FOR DETERMINATION OF ENERGY GAP AND MINORITY-CARRIER RECOMBINATION LIFETIME IN HIGHLY DOPED EMITTER
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摘要: 禁带宽度和少子复合寿命是硅晶体管发射区中重要的物理参数。本文利用p-n结反向扩散电流的温度特性和借助于线性外推法,提出了一种确定绝对零度时禁带宽度的新方法。由于发射区重掺杂,本文考虑了载流子的费米-狄拉克统计分布。提出了确定发射区中少子复合寿命的方法。该方法简便实用。
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关键词:
- 重掺杂发射区; 禁带宽度; 少子复合寿命
Abstract: Energy gap and minority-carrier recombination lifetime are important physical parameters in the emitter of silicon transistor. Using temperature characteristics obtained from the reverse diffusion current of p-n junction and by means of linear extrapolation, a new method for determination of the energy gap at 0K is presented. Based on the carrier Fermi-Dirac statistic distribution, a method for determination of minority-carrier recombination lifetime in highly doped emitter is presented. This test method is simple and can be used in practice. -
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