摘要:
本文对液相外延生长HgCdTe及其汞压控制进行了研究。在理论上对开管滑动系统中汞损失的影响作了分析和计算,提出了准平衡汞压的方法。在实验中设计制作了独特的汞回流装置,实现了对汞压的控制。通过生长工艺的条件实验,得到了各工艺参数影响外延片性能的关系,制备出表面光亮,组分为x=0.2110.002,x=0.280.001的Hg1-xCdxTe外延片。在77K下n型(未退火)和P型外延片的迁移率分别为3.36105cm2/Vs和1.81103cm2/Vs,载流子浓度分别为1.091015cm-3和1.041016cm-3。
Abstract:
The control of Hg pressure is a major problem of LEP growth of HgCdTe. In this paper the lost of Hg and its affections and control in open tube sliding LEP system are analysed theoretically. A unique method of controlling Hg pressure, called pseudo-balance Hg pressure method is proposed. In this method, a circulatory system of Hg that is efficacious for control of Hg pressure is used. By experiments of growth conditions, the better way of LEP growth of HgCdTe was found. The HgCdTe epitaxial layers have been grown with mirror-like surface morphology, x=0.2110.002 and x=0.280.001, mobility of 1.81103cm2/Vs for p-type and 3.36105cm2/Vs for n-type (not annealed), carrier concentration of 1.041016/cm-3 for p-type and 1.091015cm-3 for n-type (not annealed) at 77K.
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